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Article: A comparison between the interface properties of N2O-nitrided and N2O-grown oxides

TitleA comparison between the interface properties of N2O-nitrided and N2O-grown oxides
Authors
Xu, JPLai, PTCheng, YC
Issue Date1998
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 1998, v. 42 n. 11, p. 2053-2056 How to Cite?
DOI: http://dx.doi.org/10.1016/S0038-1101(98)00176-2
AbstractThe interface and bulk qualities of N2O-based oxides are investigated by means of backsurface Ar+ bombardment and hot-carrier stressings. It is deduced that there exists a large mechanical stress near the oxide/Si interface for N2O-grown oxide which might result from its initial accelerated growth phase, while the residual stress is negligible for N2O-nitrided oxide. Therefore, in view of another stress induced by the bombardment, the interfacial properties can be improved for N2O-grown oxide through stress compensation, but deteriorate for N2O-nitrided oxide due to increased mechanical stress, indicating fresh N2O-nitrided oxide itself has excellent interfacial and bulk qualities for high-performance devices. Moreover, for N2O-grown oxide, the improvement exhibits a turnaround behavior for long bombardment times due to stress over-compensation. © 1998 Published by Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155083
ISSN
0038-1101
2023 Impact Factor: 1.4
2023 SCImago Journal Rankings: 0.348
ISI Accession Number ID
WOS:000076995500024
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2012-08-08T08:31:47Z-
dc.date.available2012-08-08T08:31:47Z-
dc.date.issued1998en_HK
dc.identifier.citationSolid-State Electronics, 1998, v. 42 n. 11, p. 2053-2056en_HK
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155083-
dc.description.abstractThe interface and bulk qualities of N2O-based oxides are investigated by means of backsurface Ar+ bombardment and hot-carrier stressings. It is deduced that there exists a large mechanical stress near the oxide/Si interface for N2O-grown oxide which might result from its initial accelerated growth phase, while the residual stress is negligible for N2O-nitrided oxide. Therefore, in view of another stress induced by the bombardment, the interfacial properties can be improved for N2O-grown oxide through stress compensation, but deteriorate for N2O-nitrided oxide due to increased mechanical stress, indicating fresh N2O-nitrided oxide itself has excellent interfacial and bulk qualities for high-performance devices. Moreover, for N2O-grown oxide, the improvement exhibits a turnaround behavior for long bombardment times due to stress over-compensation. © 1998 Published by Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.titleA comparison between the interface properties of N2O-nitrided and N2O-grown oxidesen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0038-1101(98)00176-2-
dc.identifier.scopuseid_2-s2.0-0032208138en_HK
dc.identifier.hkuros44773-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032208138&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume42en_HK
dc.identifier.issue11en_HK
dc.identifier.spage2053en_HK
dc.identifier.epage2056en_HK
dc.identifier.isiWOS:000076995500024-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK
dc.identifier.issnl0038-1101-

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