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Article: Gate dielectrics prepared by double nitridation in NO and N2O

TitleGate dielectrics prepared by double nitridation in NO and N2O
Authors
Xu, JPLai, PTCheng, YC
Issue Date2000
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2000, v. 70 n. 1, p. 101-105 How to Cite?
DOI: http://dx.doi.org/10.1007/s003390050020
AbstractOxynitrides prepared by double nitridation in nitric oxide (NO) and nitrous oxide (N2O) are compared to the one with a single NO nitridation. Based on various hot-carrier stresses, harder oxide/Si interface, less charge trapping and generation of electron/hole traps in oxide, and larger charge-to-breakdown are observed for the doubly-nitrided gate dielectrics than the singly-nitrided one. By analyzing the nitrogen profiles in these oxynitrides, it is revealed that the involved mechanisms lie in the smaller distance of peak nitrogen concentration from the oxide/Si interface and the higher nitrogen content near the oxide/Si interface in the doubly-nitrided oxynitrides.
Persistent Identifierhttp://hdl.handle.net/10722/155120
ISSN
0947-8396
2021 Impact Factor: 2.983
2020 SCImago Journal Rankings: 0.485
ISI Accession Number ID
WOS:000084701600020
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2012-08-08T08:31:56Z-
dc.date.available2012-08-08T08:31:56Z-
dc.date.issued2000en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2000, v. 70 n. 1, p. 101-105en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155120-
dc.description.abstractOxynitrides prepared by double nitridation in nitric oxide (NO) and nitrous oxide (N2O) are compared to the one with a single NO nitridation. Based on various hot-carrier stresses, harder oxide/Si interface, less charge trapping and generation of electron/hole traps in oxide, and larger charge-to-breakdown are observed for the doubly-nitrided gate dielectrics than the singly-nitrided one. By analyzing the nitrogen profiles in these oxynitrides, it is revealed that the involved mechanisms lie in the smaller distance of peak nitrogen concentration from the oxide/Si interface and the higher nitrogen content near the oxide/Si interface in the doubly-nitrided oxynitrides.en_HK
dc.languageengen_US
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.titleGate dielectrics prepared by double nitridation in NO and N2Oen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1007/s003390050020en_HK
dc.identifier.scopuseid_2-s2.0-0033713219en_HK
dc.identifier.hkuros54600-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033713219&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume70en_HK
dc.identifier.issue1en_HK
dc.identifier.spage101en_HK
dc.identifier.epage105en_HK
dc.identifier.isiWOS:000084701600020-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK
dc.identifier.issnl0947-8396-

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