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Article: Interface properties of N2O-annealed SiC metal oxide semiconductor devices

TitleInterface properties of N2O-annealed SiC metal oxide semiconductor devices
Authors
Chakraborty, SLai, PTXu, JPChan, CLCheng, YC
KeywordsHigh-field stress
Interface property
Metal oxide semiconductor device
Semiconductor device
Silicon carbide
Silicon dioxide
Issue Date2001
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 2001, v. 45 n. 3, p. 471-474 How to Cite?
DOI: http://dx.doi.org/10.1016/S0038-1101(01)00029-6
AbstractDry-oxidized and N2O-annealed n-type 6H-SiC metal-oxide-semiconductor capacitors are investigated at room temperature using a high-frequency C-V technique. Lower oxide-charge and interface-state densities are observed in case of dry-oxidized device. Oxide reliability of the capacitors is also investigated under high-field stress. Compared to a dry-oxidized device, smaller change in interface-state density occurs for a nitrided device under high-field stress. On the other hand, positive flat-band shift of nitrided device is found to be larger after the stress, implying that the nitridation creates acceptor-type interface states and oxide traps in the device. In summary, N2O nitridation improves the SiO2/n-type 6H-SiC interface and oxide hardness against stress-induced damage. © 2001 Elsevier Science Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/155144
ISSN
0038-1101
2021 Impact Factor: 1.916
2020 SCImago Journal Rankings: 0.457
ISI Accession Number ID
WOS:000168511700017
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChakraborty, Sen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorChan, CLen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2012-08-08T08:32:03Z-
dc.date.available2012-08-08T08:32:03Z-
dc.date.issued2001en_HK
dc.identifier.citationSolid-State Electronics, 2001, v. 45 n. 3, p. 471-474en_HK
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155144-
dc.description.abstractDry-oxidized and N2O-annealed n-type 6H-SiC metal-oxide-semiconductor capacitors are investigated at room temperature using a high-frequency C-V technique. Lower oxide-charge and interface-state densities are observed in case of dry-oxidized device. Oxide reliability of the capacitors is also investigated under high-field stress. Compared to a dry-oxidized device, smaller change in interface-state density occurs for a nitrided device under high-field stress. On the other hand, positive flat-band shift of nitrided device is found to be larger after the stress, implying that the nitridation creates acceptor-type interface states and oxide traps in the device. In summary, N2O nitridation improves the SiO2/n-type 6H-SiC interface and oxide hardness against stress-induced damage. © 2001 Elsevier Science Ltd.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.subjectHigh-field stressen_HK
dc.subjectInterface propertyen_HK
dc.subjectMetal oxide semiconductor deviceen_HK
dc.subjectSemiconductor deviceen_HK
dc.subjectSilicon carbideen_HK
dc.subjectSilicon dioxideen_HK
dc.titleInterface properties of N2O-annealed SiC metal oxide semiconductor devicesen_HK
dc.typeArticleen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0038-1101(01)00029-6en_HK
dc.identifier.scopuseid_2-s2.0-0035275961en_HK
dc.identifier.hkuros61944-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035275961&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume45en_HK
dc.identifier.issue3en_HK
dc.identifier.spage471en_HK
dc.identifier.epage474en_HK
dc.identifier.isiWOS:000168511700017-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChakraborty, S=35577738500en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK
dc.identifier.issnl0038-1101-

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