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Article: InGaP/GaAs power heterostructure-emitter bipolar transistor

TitleInGaP/GaAs power heterostructure-emitter bipolar transistor
Authors
Yan, BPYang, ESYang, YFWang, XQHsu, CC
Issue Date2001
PublisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/EL
Citation
Electronics Letters, 2001, v. 37 n. 20, p. 1262-1264 How to Cite?
DOI: http://dx.doi.org/10.1049/el:20010840
AbstractThe first microwave large-signal power results measured from InGaP/GaAs heterostructure-emitter bipolar transistors (HEBT) are reported. A continuous wave output power of 0.25W with power added efficiency of 63.5% at 1.9GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 μm2. The experimental results demonstrate excellent power performance and capability of HEBTs.
Persistent Identifierhttp://hdl.handle.net/10722/155159
ISSN
0013-5194
2023 Impact Factor: 0.7
2023 SCImago Journal Rankings: 0.323
ISI Accession Number ID
WOS:000171565000038
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorYan, BPen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorYang, YFen_US
dc.contributor.authorWang, XQen_US
dc.contributor.authorHsu, CCen_US
dc.date.accessioned2012-08-08T08:32:07Z-
dc.date.available2012-08-08T08:32:07Z-
dc.date.issued2001en_US
dc.identifier.citationElectronics Letters, 2001, v. 37 n. 20, p. 1262-1264en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/10722/155159-
dc.description.abstractThe first microwave large-signal power results measured from InGaP/GaAs heterostructure-emitter bipolar transistors (HEBT) are reported. A continuous wave output power of 0.25W with power added efficiency of 63.5% at 1.9GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 μm2. The experimental results demonstrate excellent power performance and capability of HEBTs.en_US
dc.languageengen_US
dc.publisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/ELen_US
dc.relation.ispartofElectronics Lettersen_US
dc.titleInGaP/GaAs power heterostructure-emitter bipolar transistoren_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1049/el:20010840en_US
dc.identifier.scopuseid_2-s2.0-0035959794en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035959794&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume37en_US
dc.identifier.issue20en_US
dc.identifier.spage1262en_US
dc.identifier.epage1264en_US
dc.identifier.isiWOS:000171565000038-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYan, BP=7201858607en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridWang, XQ=7501857054en_US
dc.identifier.scopusauthoridHsu, CC=7404947020en_US
dc.identifier.issnl0013-5194-

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