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Article: Rutherford backscattering analysis of GaN decomposition

TitleRutherford backscattering analysis of GaN decomposition
Authors
Choi, HWCheong, MGRana, MAChua, SJOsipowicz, TPan, JS
Issue Date2003
PublisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspx
Citation
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2003, v. 21 n. 3, p. 1080-1083 How to Cite?
DOI: http://dx.doi.org/10.1116/1.1577570
AbstractRutherford backscattering analysis of GaN decomposition was presented. X-ray photoelectron spectroscopy and atomic force microscopy were also used for the analysis. The development of a surface defect peak at elevated temperatures was found out. Atomic force microscopy revealed severe roughening of the surface.
Persistent Identifierhttp://hdl.handle.net/10722/155205
ISSN
1071-1023
2018 Impact Factor: 1.351
ISI Accession Number ID
WOS:000183660800028
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorCheong, MGen_US
dc.contributor.authorRana, MAen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorOsipowicz, Ten_US
dc.contributor.authorPan, JSen_US
dc.date.accessioned2012-08-08T08:32:20Z-
dc.date.available2012-08-08T08:32:20Z-
dc.date.issued2003en_US
dc.identifier.citationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2003, v. 21 n. 3, p. 1080-1083-
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://hdl.handle.net/10722/155205-
dc.description.abstractRutherford backscattering analysis of GaN decomposition was presented. X-ray photoelectron spectroscopy and atomic force microscopy were also used for the analysis. The development of a surface defect peak at elevated temperatures was found out. Atomic force microscopy revealed severe roughening of the surface.en_US
dc.languageengen_US
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspxen_US
dc.relation.ispartofJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structuresen_US
dc.titleRutherford backscattering analysis of GaN decompositionen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1116/1.1577570-
dc.identifier.scopuseid_2-s2.0-0038794644en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0038794644&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume21en_US
dc.identifier.issue3en_US
dc.identifier.spage1080en_US
dc.identifier.epage1083en_US
dc.identifier.isiWOS:000183660800028-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridCheong, MG=7006837761en_US
dc.identifier.scopusauthoridRana, MA=7006672846en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridOsipowicz, T=7005277353en_US
dc.identifier.scopusauthoridPan, JS=7404098334en_US
dc.identifier.issnl1071-1023-

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