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Article: Minority-carrier exclusion effect in thin-film SOI temperature sensor

TitleMinority-carrier exclusion effect in thin-film SOI temperature sensor
Authors
Li, BLai, PLiu, BZheng, X
KeywordsHigh Temperature Sensors
Minority-Carrier Exclusion Effect
Soi
Spreading Resistance
Issue Date2003
Citation
Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2003, v. 24 n. 5, p. 461-465 How to Cite?
AbstractA silicon temperature sensor with a conventional resistor structure is fabricated on thin-film silicon-on-insulator (SOI) substrate. The sensor has very promising characteristics. The maximum operating temperature can reach 550°C even at a low current of 0.1 mA. Experimental results support that the minority-carrier exclusion effect can be strong in the conventional resistor structure when the silicon film is sufficiently thin, thus significantly raising the maximum operating temperature. Moreover, since the structure of the device on thin-film SOI wafer is not crucial in controlling the maximum operating temperature, device layout can be varied according to the requirements of applications.
Persistent Identifierhttp://hdl.handle.net/10722/155214
ISSN
0253-4177
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, Ben_US
dc.contributor.authorLai, Pen_US
dc.contributor.authorLiu, Ben_US
dc.contributor.authorZheng, Xen_US
dc.date.accessioned2012-08-08T08:32:23Z-
dc.date.available2012-08-08T08:32:23Z-
dc.date.issued2003en_US
dc.identifier.citationPan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2003, v. 24 n. 5, p. 461-465en_US
dc.identifier.issn0253-4177en_US
dc.identifier.urihttp://hdl.handle.net/10722/155214-
dc.description.abstractA silicon temperature sensor with a conventional resistor structure is fabricated on thin-film silicon-on-insulator (SOI) substrate. The sensor has very promising characteristics. The maximum operating temperature can reach 550°C even at a low current of 0.1 mA. Experimental results support that the minority-carrier exclusion effect can be strong in the conventional resistor structure when the silicon film is sufficiently thin, thus significantly raising the maximum operating temperature. Moreover, since the structure of the device on thin-film SOI wafer is not crucial in controlling the maximum operating temperature, device layout can be varied according to the requirements of applications.en_US
dc.languageengen_US
dc.relation.ispartofPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductorsen_US
dc.subjectHigh Temperature Sensorsen_US
dc.subjectMinority-Carrier Exclusion Effecten_US
dc.subjectSoien_US
dc.subjectSpreading Resistanceen_US
dc.titleMinority-carrier exclusion effect in thin-film SOI temperature sensoren_US
dc.typeArticleen_US
dc.identifier.emailLai, P:laip@eee.hku.hken_US
dc.identifier.authorityLai, P=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0042819652en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0042819652&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume24en_US
dc.identifier.issue5en_US
dc.identifier.spage461en_US
dc.identifier.epage465en_US
dc.publisher.placeChinaen_US
dc.identifier.scopusauthoridLi, B=26643217800en_US
dc.identifier.scopusauthoridLai, P=7202946460en_US
dc.identifier.scopusauthoridLiu, B=7408690364en_US
dc.identifier.scopusauthoridZheng, X=7404091424en_US
dc.identifier.issnl0253-4177-

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