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Article: Effect of Schottky barrier height on EL2 measurement by deep-level transient spectroscopy

TitleEffect of Schottky barrier height on EL2 measurement by deep-level transient spectroscopy
Authors
Ma, QYSchmidt, MTWu, XEvans, HLYang, ES
Issue Date1988
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1988, v. 64 n. 5, p. 2469-2472 How to Cite?
DOI: http://dx.doi.org/10.1063/1.341655
AbstractA systematic study of EL2 midgap trap in GaAs using deep-level transient spectroscopy (DLTS) is reported for contacts having a large range of Schottky barrier height. The results show that the DLTS signal of EL2 increases as the barrier height rises from 0.62 eV and saturates for barrier height above 0.83 eV. It is found, for the first time, that for Schottky barrier height lower than 0.62 eV the EL2 signal disappears. A model for calculation of the quasi-Fermi level in the depletion region is used to explain the variation and disappearance of the EL2 signal. This model may also apply to other electron traps near midgap.
Persistent Identifierhttp://hdl.handle.net/10722/155226
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:A1988P862000032

 

DC FieldValueLanguage
dc.contributor.authorMa, QYen_US
dc.contributor.authorSchmidt, MTen_US
dc.contributor.authorWu, Xen_US
dc.contributor.authorEvans, HLen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:32:26Z-
dc.date.available2012-08-08T08:32:26Z-
dc.date.issued1988en_US
dc.identifier.citationJournal of Applied Physics, 1988, v. 64 n. 5, p. 2469-2472-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155226-
dc.description.abstractA systematic study of EL2 midgap trap in GaAs using deep-level transient spectroscopy (DLTS) is reported for contacts having a large range of Schottky barrier height. The results show that the DLTS signal of EL2 increases as the barrier height rises from 0.62 eV and saturates for barrier height above 0.83 eV. It is found, for the first time, that for Schottky barrier height lower than 0.62 eV the EL2 signal disappears. A model for calculation of the quasi-Fermi level in the depletion region is used to explain the variation and disappearance of the EL2 signal. This model may also apply to other electron traps near midgap.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleEffect of Schottky barrier height on EL2 measurement by deep-level transient spectroscopyen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.341655en_US
dc.identifier.scopuseid_2-s2.0-0343730065en_US
dc.identifier.volume64en_US
dc.identifier.issue5en_US
dc.identifier.spage2469en_US
dc.identifier.epage2472en_US
dc.identifier.isiWOS:A1988P862000032-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridMa, QY=7402815617en_US
dc.identifier.scopusauthoridSchmidt, MT=23016700400en_US
dc.identifier.scopusauthoridWu, X=7407065023en_US
dc.identifier.scopusauthoridEvans, HL=7401520988en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0021-8979-

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