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Conference Paper: In situ processing for gaas devices using ultraviolet laser formed oxides.

TitleIn situ processing for gaas devices using ultraviolet laser formed oxides.
Authors
Schmidt, MTPodlesnik, DVYu, CFYang, ESOsgood Jr, RM
Issue Date1988
Citation
Conference on Lasers and Electro-Optics, Anaheim, CA, USA, 1988 How to Cite?
AbstractThe GaAs surface has been modified to reduce the density of interface states when a Schottky barrier contact is formed, producing a barrier that correlates more strongly with the metal work function. The GaAs (100) surface was modified photochemically by the reaction of oxygen under deep ultraviolet-laser illumination prior to metal deposition. The electrical characteristics of the resulting contacts have been investigated. The results confirm the effectiveness of the results.
Persistent Identifierhttp://hdl.handle.net/10722/155268

 

DC FieldValueLanguage
dc.contributor.authorSchmidt, MTen_US
dc.contributor.authorPodlesnik, DVen_US
dc.contributor.authorYu, CFen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorOsgood Jr, RMen_US
dc.date.accessioned2012-08-08T08:32:37Z-
dc.date.available2012-08-08T08:32:37Z-
dc.date.issued1988en_US
dc.identifier.citationConference on Lasers and Electro-Optics, Anaheim, CA, USA, 1988-
dc.identifier.urihttp://hdl.handle.net/10722/155268-
dc.description.abstractThe GaAs surface has been modified to reduce the density of interface states when a Schottky barrier contact is formed, producing a barrier that correlates more strongly with the metal work function. The GaAs (100) surface was modified photochemically by the reaction of oxygen under deep ultraviolet-laser illumination prior to metal deposition. The electrical characteristics of the resulting contacts have been investigated. The results confirm the effectiveness of the results.en_US
dc.languageengen_US
dc.titleIn situ processing for gaas devices using ultraviolet laser formed oxides.en_US
dc.typeConference_Paperen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-18844479191en_US
dc.identifier.scopusauthoridSchmidt, MT=23016700400en_US
dc.identifier.scopusauthoridPodlesnik, DV=6603771158en_US
dc.identifier.scopusauthoridYu, CF=22973795500en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridOsgood Jr, RM=35596793600en_US

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