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Article: Variation of the ideality factor in the curent-voltage characteristics of double-heterostructure diodes
Title | Variation of the ideality factor in the curent-voltage characteristics of double-heterostructure diodes |
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Authors | |
Issue Date | 1980 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 1980, v. 51 n. 2, p. 1262-1264 How to Cite? |
Abstract | The low-current I-V characteristics of Al xGa 1-xAs- GaAs DH laser diodes have been investigated. The variation of the ideality factor is explained by taking into account the interaction of the thermionic-field emission and interface charge. Both theoretical calculations and experimental data are presented here to show the validity of our model. |
Persistent Identifier | http://hdl.handle.net/10722/155355 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Yang, ES | en_US |
dc.contributor.author | Wu, CM | en_US |
dc.contributor.author | Hung, RY | en_US |
dc.date.accessioned | 2012-08-08T08:33:02Z | - |
dc.date.available | 2012-08-08T08:33:02Z | - |
dc.date.issued | 1980 | en_US |
dc.identifier.citation | Journal of Applied Physics, 1980, v. 51 n. 2, p. 1262-1264 | - |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/155355 | - |
dc.description.abstract | The low-current I-V characteristics of Al xGa 1-xAs- GaAs DH laser diodes have been investigated. The variation of the ideality factor is explained by taking into account the interaction of the thermionic-field emission and interface charge. Both theoretical calculations and experimental data are presented here to show the validity of our model. | en_US |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_US |
dc.relation.ispartof | Journal of Applied Physics | en_US |
dc.title | Variation of the ideality factor in the curent-voltage characteristics of double-heterostructure diodes | en_US |
dc.type | Article | en_US |
dc.identifier.email | Yang, ES:esyang@hkueee.hku.hk | en_US |
dc.identifier.authority | Yang, ES=rp00199 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.327704 | en_US |
dc.identifier.scopus | eid_2-s2.0-33847712066 | en_US |
dc.identifier.volume | 51 | en_US |
dc.identifier.issue | 2 | en_US |
dc.identifier.spage | 1262 | en_US |
dc.identifier.epage | 1264 | en_US |
dc.identifier.isi | WOS:A1980JK65800079 | - |
dc.publisher.place | United States | en_US |
dc.identifier.scopusauthorid | Yang, ES=7202021229 | en_US |
dc.identifier.scopusauthorid | Wu, CM=7501663643 | en_US |
dc.identifier.scopusauthorid | Hung, RY=7102804721 | en_US |
dc.identifier.issnl | 0021-8979 | - |