File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Formation of stoichiometric SiGe oxide by electron cyclotron resonance plasma

TitleFormation of stoichiometric SiGe oxide by electron cyclotron resonance plasma
Authors
Li, PWLiou, HKYang, ESIyer, SSSmith Iii, TPLu, Z
Issue Date1992
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1992, v. 60 n. 26, p. 3265-3267 How to Cite?
DOI: http://dx.doi.org/10.1063/1.106714
AbstractElectron cyclotron resonance (ECR) plasma oxidation of SiGe alloys was investigated at temperatures from room temperature to 500°C. Both Si and Ge are shown to be fully oxidized, forming SiO 2 and GeO 2. Auger depth profiling reveals that there is no Ge-rich SiGe layer after oxidation. With increasing temperature up to 500°C, the oxide is stoichiometric and it does not lose its GeO 2 component. Oxidation has also been carried out at both positive and negative sample bias in order to identify the role of ions, electrons, and neutrals. From biasing experiments negative oxygen ions and atomic neutrals appear to be the major reaction species.
Persistent Identifierhttp://hdl.handle.net/10722/155401
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:A1992JA80600022

 

DC FieldValueLanguage
dc.contributor.authorLi, PWen_US
dc.contributor.authorLiou, HKen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorIyer, SSen_US
dc.contributor.authorSmith Iii, TPen_US
dc.contributor.authorLu, Zen_US
dc.date.accessioned2012-08-08T08:33:18Z-
dc.date.available2012-08-08T08:33:18Z-
dc.date.issued1992en_US
dc.identifier.citationApplied Physics Letters, 1992, v. 60 n. 26, p. 3265-3267-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155401-
dc.description.abstractElectron cyclotron resonance (ECR) plasma oxidation of SiGe alloys was investigated at temperatures from room temperature to 500°C. Both Si and Ge are shown to be fully oxidized, forming SiO 2 and GeO 2. Auger depth profiling reveals that there is no Ge-rich SiGe layer after oxidation. With increasing temperature up to 500°C, the oxide is stoichiometric and it does not lose its GeO 2 component. Oxidation has also been carried out at both positive and negative sample bias in order to identify the role of ions, electrons, and neutrals. From biasing experiments negative oxygen ions and atomic neutrals appear to be the major reaction species.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleFormation of stoichiometric SiGe oxide by electron cyclotron resonance plasmaen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.106714en_US
dc.identifier.scopuseid_2-s2.0-36449000640en_US
dc.identifier.volume60en_US
dc.identifier.issue26en_US
dc.identifier.spage3265en_US
dc.identifier.epage3267en_US
dc.identifier.isiWOS:A1992JA80600022-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLi, PW=7404773352en_US
dc.identifier.scopusauthoridLiou, HK=7102330018en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridIyer, SS=7202947597en_US
dc.identifier.scopusauthoridSmith III, TP=7405501049en_US
dc.identifier.scopusauthoridLu, Z=23015501300en_US
dc.identifier.issnl0003-6951-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats