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Article: Characterization of polycrystalline silicon contacts by photoconductance measurements

TitleCharacterization of polycrystalline silicon contacts by photoconductance measurements
Authors
Jalali, BYang, ESMei, P
Issue Date1990
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1990, v. 67 n. 4, p. 1953-1956 How to Cite?
DOI: http://dx.doi.org/10.1063/1.345573
AbstractThe confinement of minority carriers by polycrystalline silicon (polysilicon) contacts has been studied using the photoconductivity technique. Steady-state and transient optical measurements show a dramatic increase of stored carriers by these contacts. From a thermionic-diffusion model, a barrier height of 130 meV for the polysilicon/silicon contact has been extracted.
Persistent Identifierhttp://hdl.handle.net/10722/155412
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:A1990CP96100051

 

DC FieldValueLanguage
dc.contributor.authorJalali, Ben_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorMei, Pen_US
dc.date.accessioned2012-08-08T08:33:21Z-
dc.date.available2012-08-08T08:33:21Z-
dc.date.issued1990en_US
dc.identifier.citationJournal of Applied Physics, 1990, v. 67 n. 4, p. 1953-1956-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155412-
dc.description.abstractThe confinement of minority carriers by polycrystalline silicon (polysilicon) contacts has been studied using the photoconductivity technique. Steady-state and transient optical measurements show a dramatic increase of stored carriers by these contacts. From a thermionic-diffusion model, a barrier height of 130 meV for the polysilicon/silicon contact has been extracted.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleCharacterization of polycrystalline silicon contacts by photoconductance measurementsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.345573en_US
dc.identifier.scopuseid_2-s2.0-36549099762en_US
dc.identifier.volume67en_US
dc.identifier.issue4en_US
dc.identifier.spage1953en_US
dc.identifier.epage1956en_US
dc.identifier.isiWOS:A1990CP96100051-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridJalali, B=7004889917en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridMei, P=36876516400en_US
dc.identifier.issnl0021-8979-

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