File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Determination of grain boundary barrier height and interface states by a focused laser beam

TitleDetermination of grain boundary barrier height and interface states by a focused laser beam
Authors
Poon, EYang, ESEvans, HLHwang, WOsgood Jr, RM
Issue Date1983
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1983, v. 42 n. 3, p. 285-287 How to Cite?
DOI: http://dx.doi.org/10.1063/1.93881
AbstractAn experimental technique has been developed to study the electrical properties of semiconductor grain boundaries (GB's) by a focused laser beam. The laser beam is trained on a GB while the photoconductivity of the sample is measured. This technique allows us to examine a localized region of an individual GB in semiconductors with multiple grains. The measurement of the steady state and transient signals as a function of temperature determines the grain boundary barrier height, trap energy, and capture cross section.
Persistent Identifierhttp://hdl.handle.net/10722/155419
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:A1983QA35600030

 

DC FieldValueLanguage
dc.contributor.authorPoon, Een_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorEvans, HLen_US
dc.contributor.authorHwang, Wen_US
dc.contributor.authorOsgood Jr, RMen_US
dc.date.accessioned2012-08-08T08:33:23Z-
dc.date.available2012-08-08T08:33:23Z-
dc.date.issued1983en_US
dc.identifier.citationApplied Physics Letters, 1983, v. 42 n. 3, p. 285-287-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155419-
dc.description.abstractAn experimental technique has been developed to study the electrical properties of semiconductor grain boundaries (GB's) by a focused laser beam. The laser beam is trained on a GB while the photoconductivity of the sample is measured. This technique allows us to examine a localized region of an individual GB in semiconductors with multiple grains. The measurement of the steady state and transient signals as a function of temperature determines the grain boundary barrier height, trap energy, and capture cross section.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleDetermination of grain boundary barrier height and interface states by a focused laser beamen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.93881en_US
dc.identifier.scopuseid_2-s2.0-36749115619en_US
dc.identifier.volume42en_US
dc.identifier.issue3en_US
dc.identifier.spage285en_US
dc.identifier.epage287en_US
dc.identifier.isiWOS:A1983QA35600030-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridPoon, E=7003615942en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridEvans, HL=7401520988en_US
dc.identifier.scopusauthoridHwang, W=25630510100en_US
dc.identifier.scopusauthoridOsgood Jr, RM=35596793600en_US
dc.identifier.issnl0003-6951-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats