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Conference Paper: Nanocomposite field effect transistors based on zinc oxide/polymer blends

TitleNanocomposite field effect transistors based on zinc oxide/polymer blends
Authors
Issue Date2007
Citation
Digest Of Papers - Microprocesses And Nanotechnology 2007; 20Th International Microprocesses And Nanotechnology Conference, Mnc, 2007, p. 104-105 How to Cite?
AbstractSignificant progress is being made in the realization of thin-film transistors (TFTs) for application in various electronic devices and circuits [1-5]. Currently, one of the important challenges in this area is to design low-cost and stable organic semiconductors that possess high field-effect mobilities for constructing low-power high-speed transistor devices. However, there are only limited stable and cheap organic semiconductors that are applicable for OTFT applications. Here, we report the work in our laboratory that focus on stable, inexpensive and high field-effect mobility nano-composite materials for the potential application in OTFT technologies. Solution processed polymer based nano-composite field effect transistors with wide band gap semi-conducting ZnO nano-tetrapods and nano-crystals dispersed in the polymer matrix were utilized to study the field effect behaviour. The electrical characteristics of polymer based wide band gap nano-crystal or nano-tetrapod composite devices exhibit an increase in the hole mobility up to two orders of magnitude higher than the pristine polymer.
Persistent Identifierhttp://hdl.handle.net/10722/155480

 

DC FieldValueLanguage
dc.contributor.authorRoy, VALen_HK
dc.contributor.authorXu, ZXen_HK
dc.contributor.authorStallinga, Pen_HK
dc.contributor.authorXiang, HFen_HK
dc.contributor.authorYan, Ben_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2012-08-08T08:33:43Z-
dc.date.available2012-08-08T08:33:43Z-
dc.date.issued2007en_HK
dc.identifier.citationDigest Of Papers - Microprocesses And Nanotechnology 2007; 20Th International Microprocesses And Nanotechnology Conference, Mnc, 2007, p. 104-105en_US
dc.identifier.urihttp://hdl.handle.net/10722/155480-
dc.description.abstractSignificant progress is being made in the realization of thin-film transistors (TFTs) for application in various electronic devices and circuits [1-5]. Currently, one of the important challenges in this area is to design low-cost and stable organic semiconductors that possess high field-effect mobilities for constructing low-power high-speed transistor devices. However, there are only limited stable and cheap organic semiconductors that are applicable for OTFT applications. Here, we report the work in our laboratory that focus on stable, inexpensive and high field-effect mobility nano-composite materials for the potential application in OTFT technologies. Solution processed polymer based nano-composite field effect transistors with wide band gap semi-conducting ZnO nano-tetrapods and nano-crystals dispersed in the polymer matrix were utilized to study the field effect behaviour. The electrical characteristics of polymer based wide band gap nano-crystal or nano-tetrapod composite devices exhibit an increase in the hole mobility up to two orders of magnitude higher than the pristine polymer.en_HK
dc.languageengen_US
dc.relation.ispartofDigest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNCen_HK
dc.titleNanocomposite field effect transistors based on zinc oxide/polymer blendsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailXiang, HF:hfxiang@eee.hku.hken_HK
dc.identifier.emailChe, CM:cmche@hku.hken_HK
dc.identifier.authorityXiang, HF=rp00196en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/IMNC.2007.4456126en_HK
dc.identifier.scopuseid_2-s2.0-47349131216en_HK
dc.identifier.spage104en_HK
dc.identifier.epage105en_HK
dc.identifier.scopusauthoridRoy, VAL=7005870324en_HK
dc.identifier.scopusauthoridXu, ZX=8726524500en_HK
dc.identifier.scopusauthoridStallinga, P=6701332987en_HK
dc.identifier.scopusauthoridXiang, HF=23065758900en_HK
dc.identifier.scopusauthoridYan, B=7201858607en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK

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