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Article: Calculation of intrinsic transport parameters of a double-diffused transistor

TitleCalculation of intrinsic transport parameters of a double-diffused transistor
Authors
Yang, ES
Issue Date1969
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1969, v. 12 n. 5, p. 399-405 How to Cite?
AbstractA double diffused transistor having Gaussian impurity distribution is analyzed by using a power-series method. The minority carrier-density distribution and frequency response are investigated. It is shown that the transport factor and intrinsic frequency cutoff characteristics are related to the impurity diffusion length and impurity surface concentration. Theoretical calculation of the cutoff frequency of a commercially available device is in agreement with the measured f T. © 1969.
Persistent Identifierhttp://hdl.handle.net/10722/155489
ISSN
0038-1101
2021 Impact Factor: 1.916
2020 SCImago Journal Rankings: 0.457

 

DC FieldValueLanguage
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:33:45Z-
dc.date.available2012-08-08T08:33:45Z-
dc.date.issued1969en_US
dc.identifier.citationSolid State Electronics, 1969, v. 12 n. 5, p. 399-405en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/155489-
dc.description.abstractA double diffused transistor having Gaussian impurity distribution is analyzed by using a power-series method. The minority carrier-density distribution and frequency response are investigated. It is shown that the transport factor and intrinsic frequency cutoff characteristics are related to the impurity diffusion length and impurity surface concentration. Theoretical calculation of the cutoff frequency of a commercially available device is in agreement with the measured f T. © 1969.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleCalculation of intrinsic transport parameters of a double-diffused transistoren_US
dc.typeArticleen_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-49849121120en_US
dc.identifier.volume12en_US
dc.identifier.issue5en_US
dc.identifier.spage399en_US
dc.identifier.epage405en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.issnl0038-1101-

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