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Article: Novel silicon-embedded coreless transformer for on-chip isolated signal transfer
Title | Novel silicon-embedded coreless transformer for on-chip isolated signal transfer |
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Authors | |
Keywords | Integrated Circuits Isolation Technology Magnetic Instruments Transformers |
Issue Date | 2011 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=5165412 |
Citation | IEEE Magnetics Letters, 2011, v. 2, article no. 6500103 How to Cite? |
Abstract | In this letter, a novel silicon-embedded coreless transformer is proposed and demonstrated. The transformer is fabricated in the thick bottom layer of a silicon substrate and connected to the frontside through vias opened in the thin top layer where all other components of the system can be fabricated. A 5-turn coreless transformer fabricated using this monolithic transformer technology achieves a small area of 2 mm 2 and a good voltage gain of larger than -0.8 dB (load = 50 Ω, best reported so far) from 12 to 100 MHz. This technology shows great potential for on-chip isolated signal transfer. © 2011 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/155619 |
ISSN | 2023 Impact Factor: 1.1 2023 SCImago Journal Rankings: 0.314 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Wu, R | en_US |
dc.contributor.author | Sin, JKO | en_US |
dc.contributor.author | Hui, SY | en_US |
dc.date.accessioned | 2012-08-08T08:34:24Z | - |
dc.date.available | 2012-08-08T08:34:24Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.citation | IEEE Magnetics Letters, 2011, v. 2, article no. 6500103 | en_US |
dc.identifier.issn | 1949-307X | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/155619 | - |
dc.description.abstract | In this letter, a novel silicon-embedded coreless transformer is proposed and demonstrated. The transformer is fabricated in the thick bottom layer of a silicon substrate and connected to the frontside through vias opened in the thin top layer where all other components of the system can be fabricated. A 5-turn coreless transformer fabricated using this monolithic transformer technology achieves a small area of 2 mm 2 and a good voltage gain of larger than -0.8 dB (load = 50 Ω, best reported so far) from 12 to 100 MHz. This technology shows great potential for on-chip isolated signal transfer. © 2011 IEEE. | en_US |
dc.language | eng | en_US |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=5165412 | - |
dc.relation.ispartof | IEEE Magnetics Letters | en_US |
dc.subject | Integrated Circuits | en_US |
dc.subject | Isolation Technology | en_US |
dc.subject | Magnetic Instruments | en_US |
dc.subject | Transformers | en_US |
dc.title | Novel silicon-embedded coreless transformer for on-chip isolated signal transfer | en_US |
dc.type | Article | en_US |
dc.identifier.email | Hui, SY:ronhui@eee.hku.hk | en_US |
dc.identifier.authority | Hui, SY=rp01510 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1109/LMAG.2011.2129555 | en_US |
dc.identifier.scopus | eid_2-s2.0-79958710604 | en_US |
dc.identifier.hkuros | 208777 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-79958710604&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 2 | en_US |
dc.identifier.isi | WOS:000208910300015 | - |
dc.publisher.place | United States | - |
dc.identifier.scopusauthorid | Wu, R=36723039000 | en_US |
dc.identifier.scopusauthorid | Sin, JKO=7103312667 | en_US |
dc.identifier.scopusauthorid | Hui, SY=7202831744 | en_US |
dc.identifier.issnl | 1949-3088 | - |