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Conference Paper: RTP formed oxynitride via direct nitridation in N 2
Title | RTP formed oxynitride via direct nitridation in N 2 |
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Authors | |
Issue Date | 2000 |
Citation | Proceedings Of The Ieee Hong Kong Electron Devices Meeting, 2000, p. 104-107 How to Cite? |
Abstract | A method using direct nitridation in N 2 is presented. Two different processing approaches are used to produce rapid thermal processing (RTP) nitrided oxides or oxynitrides. The first approach is the direct nitridation of the Si surface with N 2 gas at an elevated temperature (>1150 °C) to form Si 3N 4 followed by O 2 oxidation, while the second involves O 2 oxidation of the Si wafer to form SiO 2 followed by N 2 nitridation. The ultrathin films are electrically characterized and its viability as a SiO 2 substitute is proven for future CMOS device generations. |
Persistent Identifier | http://hdl.handle.net/10722/158294 |
DC Field | Value | Language |
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dc.contributor.author | Khoueir, A | en_US |
dc.contributor.author | Lu, ZH | en_US |
dc.contributor.author | Ng, WT | en_US |
dc.contributor.author | Tay, SP | en_US |
dc.contributor.author | Lai, PT | en_US |
dc.date.accessioned | 2012-08-08T08:58:56Z | - |
dc.date.available | 2012-08-08T08:58:56Z | - |
dc.date.issued | 2000 | en_US |
dc.identifier.citation | Proceedings Of The Ieee Hong Kong Electron Devices Meeting, 2000, p. 104-107 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/158294 | - |
dc.description.abstract | A method using direct nitridation in N 2 is presented. Two different processing approaches are used to produce rapid thermal processing (RTP) nitrided oxides or oxynitrides. The first approach is the direct nitridation of the Si surface with N 2 gas at an elevated temperature (>1150 °C) to form Si 3N 4 followed by O 2 oxidation, while the second involves O 2 oxidation of the Si wafer to form SiO 2 followed by N 2 nitridation. The ultrathin films are electrically characterized and its viability as a SiO 2 substitute is proven for future CMOS device generations. | en_US |
dc.language | eng | en_US |
dc.relation.ispartof | Proceedings of the IEEE Hong Kong Electron Devices Meeting | en_US |
dc.title | RTP formed oxynitride via direct nitridation in N 2 | en_US |
dc.type | Conference_Paper | en_US |
dc.identifier.email | Lai, PT:laip@eee.hku.hk | en_US |
dc.identifier.authority | Lai, PT=rp00130 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.scopus | eid_2-s2.0-0034475449 | en_US |
dc.identifier.spage | 104 | en_US |
dc.identifier.epage | 107 | en_US |
dc.identifier.scopusauthorid | Khoueir, A=6506783745 | en_US |
dc.identifier.scopusauthorid | Lu, ZH=24360510000 | en_US |
dc.identifier.scopusauthorid | Ng, WT=7401613512 | en_US |
dc.identifier.scopusauthorid | Tay, SP=7102586556 | en_US |
dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_US |