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Conference Paper: Ultra-Low-Power Thermal Sensor with Silicon-On-Insulator (SOI) Structure for High-Temperature Applications

TitleUltra-Low-Power Thermal Sensor with Silicon-On-Insulator (SOI) Structure for High-Temperature Applications
Authors
Li, BLai, PTSin, JKOLiu, BYZheng, XRWu, ZH
KeywordsHigh-Temperature Sensor
Sot
Thermal Resistor
Issue Date2002
Citation
Proceedings Of Ieee Sensors, 2002, v. 1 n. 2, p. 1419-1422 How to Cite?
AbstractIn this work, thermal resistors based on a simple rectangular structure are fabricated on three kinds of substrates - thin-film (0.1 μm) silicon-on-insulator (SOI), thick-film (10 μm) SOI and bulk Si, and their characteristics are investigated. Measurements verify that SOI can indeed have additional freedom for increasing the maximum operating temperature (T max). More importantly, the thin-film SOI thermal resistor not only achieves a Tmax as high as 420°C, but also a low operating current of 1 μA, which is about 1,000 times smaller than that of the thick-film SOI counterpart for the same Tmax. In conclusion, silicon resistor on SOI is a promising low-cost thermal sensor for a broad scope of low-power high-temperature applications.
Persistent Identifierhttp://hdl.handle.net/10722/158387
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, Ben_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorSin, JKOen_US
dc.contributor.authorLiu, BYen_US
dc.contributor.authorZheng, XRen_US
dc.contributor.authorWu, ZHen_US
dc.date.accessioned2012-08-08T08:59:22Z-
dc.date.available2012-08-08T08:59:22Z-
dc.date.issued2002en_US
dc.identifier.citationProceedings Of Ieee Sensors, 2002, v. 1 n. 2, p. 1419-1422en_US
dc.identifier.urihttp://hdl.handle.net/10722/158387-
dc.description.abstractIn this work, thermal resistors based on a simple rectangular structure are fabricated on three kinds of substrates - thin-film (0.1 μm) silicon-on-insulator (SOI), thick-film (10 μm) SOI and bulk Si, and their characteristics are investigated. Measurements verify that SOI can indeed have additional freedom for increasing the maximum operating temperature (T max). More importantly, the thin-film SOI thermal resistor not only achieves a Tmax as high as 420°C, but also a low operating current of 1 μA, which is about 1,000 times smaller than that of the thick-film SOI counterpart for the same Tmax. In conclusion, silicon resistor on SOI is a promising low-cost thermal sensor for a broad scope of low-power high-temperature applications.en_US
dc.languageengen_US
dc.relation.ispartofProceedings of IEEE Sensorsen_US
dc.subjectHigh-Temperature Sensoren_US
dc.subjectSoten_US
dc.subjectThermal Resistoren_US
dc.titleUltra-Low-Power Thermal Sensor with Silicon-On-Insulator (SOI) Structure for High-Temperature Applicationsen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-1542348528en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-1542348528&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume1en_US
dc.identifier.issue2en_US
dc.identifier.spage1419en_US
dc.identifier.epage1422en_US
dc.identifier.scopusauthoridLi, B=26643217800en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridSin, JKO=7103312667en_US
dc.identifier.scopusauthoridLiu, BY=7408690364en_US
dc.identifier.scopusauthoridZheng, XR=7404091424en_US
dc.identifier.scopusauthoridWu, ZH=7501411463en_US

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