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Conference Paper: A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects

TitleA 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects
Authors
Xu, JPLi, YPLai, PTChen, WBXu, SG
Issue Date2006
Citation
2005 IEEE Conference On Electron Devices And Solid-State Circuits, EDSSC, 2006, p. 253-256 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2005.1635254
AbstractA threshold condition different from the classical one is proposed for MOSFET with quantum effects. Furthermore, an accurate 1-D threshold-voltage model including polysilicon-depletion effects and a 2-D quantum-modified threshold-voltage model for small MOSFET are built. The simulated results exhibit good agreement with measurement data. © 2005 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/158515
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_US
dc.contributor.authorLi, YPen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorChen, WBen_US
dc.contributor.authorXu, SGen_US
dc.date.accessioned2012-08-08T09:00:02Z-
dc.date.available2012-08-08T09:00:02Z-
dc.date.issued2006en_US
dc.identifier.citation2005 IEEE Conference On Electron Devices And Solid-State Circuits, EDSSC, 2006, p. 253-256en_US
dc.identifier.urihttp://hdl.handle.net/10722/158515-
dc.description.abstractA threshold condition different from the classical one is proposed for MOSFET with quantum effects. Furthermore, an accurate 1-D threshold-voltage model including polysilicon-depletion effects and a 2-D quantum-modified threshold-voltage model for small MOSFET are built. The simulated results exhibit good agreement with measurement data. © 2005 IEEE.en_US
dc.languageengen_US
dc.relation.ispartof2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSCen_US
dc.titleA 2-D threshold-voltage model for small MOSFET with quantum-mechanical effectsen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/EDSSC.2005.1635254en_US
dc.identifier.scopuseid_2-s2.0-43549116550en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-43549116550&selection=ref&src=s&origin=recordpageen_US
dc.identifier.spage253en_US
dc.identifier.epage256en_US
dc.identifier.scopusauthoridXu, JP=35754128700en_US
dc.identifier.scopusauthoridLi, YP=47661368400en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridChen, WB=51563508300en_US
dc.identifier.scopusauthoridXu, SG=14055300000en_US

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