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Conference Paper: Comparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory

TitleComparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory
Authors
Liu, LXu, JPHuang, XDJi, FLai, PT
Issue Date2010
Citation
2010 Ieee International Conference Of Electron Devices And Solid-State Circuits, Edssc 2010, 2010 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2010.5713745
AbstractStorage properties of high-κ HfLaON or HfON dielectric as charge-storage layer in MONOS non-volatile memory device are comparatively investigated by fabricating MIS capacitors using reactive sputtering method. Larger memory window, higher program/erase speed, and reasonable retention were observed for the HfLaON MIS capacitor than the HfON MIS capacitor. This is probably because La incorporation in HfON could induce more traps with deeper levels and thus higher trapping efficiency, and more stable atomic structure compared to the HfON dielectric. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/158695
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLiu, Len_US
dc.contributor.authorXu, JPen_US
dc.contributor.authorHuang, XDen_US
dc.contributor.authorJi, Fen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T09:00:53Z-
dc.date.available2012-08-08T09:00:53Z-
dc.date.issued2010en_US
dc.identifier.citation2010 Ieee International Conference Of Electron Devices And Solid-State Circuits, Edssc 2010, 2010en_US
dc.identifier.urihttp://hdl.handle.net/10722/158695-
dc.description.abstractStorage properties of high-κ HfLaON or HfON dielectric as charge-storage layer in MONOS non-volatile memory device are comparatively investigated by fabricating MIS capacitors using reactive sputtering method. Larger memory window, higher program/erase speed, and reasonable retention were observed for the HfLaON MIS capacitor than the HfON MIS capacitor. This is probably because La incorporation in HfON could induce more traps with deeper levels and thus higher trapping efficiency, and more stable atomic structure compared to the HfON dielectric. © 2010 IEEE.en_US
dc.languageengen_US
dc.relation.ispartof2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010en_US
dc.titleComparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memoryen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/EDSSC.2010.5713745en_US
dc.identifier.scopuseid_2-s2.0-79952522684en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952522684&selection=ref&src=s&origin=recordpageen_US
dc.identifier.scopusauthoridLiu, L=35778603700en_US
dc.identifier.scopusauthoridXu, JP=35754128700en_US
dc.identifier.scopusauthoridHuang, XD=37057428400en_US
dc.identifier.scopusauthoridJi, F=8238553900en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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