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Conference Paper: A study on metal-insulator-silicon hydrogen sensor with La2O3 as gate insulator

TitleA study on metal-insulator-silicon hydrogen sensor with La2O3 as gate insulator
Authors
Chen, GLai, PTYu, J
Issue Date2010
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000707
Citation
The 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010), Shanghai, China, 1-4 November 2010. In Conference Proceedings, 2010, p. 1465-1467 How to Cite?
DOI: http://dx.doi.org/10.1109/ICSICT.2010.5667552
AbstractA new MIS Schottky-diode hydrogen sensor with La2O3 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 300oC. Results showed that the device had excellent hydrogen-sensing performance below about 250oC.
Persistent Identifierhttp://hdl.handle.net/10722/160263
ISBN
978-1-4244-5798-4
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, Gen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorYu, Jen_US
dc.date.accessioned2012-08-16T06:06:40Z-
dc.date.available2012-08-16T06:06:40Z-
dc.date.issued2010en_US
dc.identifier.citationThe 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010), Shanghai, China, 1-4 November 2010. In Conference Proceedings, 2010, p. 1465-1467en_US
dc.identifier.isbn978-1-4244-5798-4-
dc.identifier.urihttp://hdl.handle.net/10722/160263-
dc.description.abstractA new MIS Schottky-diode hydrogen sensor with La2O3 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 300oC. Results showed that the device had excellent hydrogen-sensing performance below about 250oC.-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000707-
dc.relation.ispartofInternational Conference on Solid-State and Integrated Circuit Technology Proceedingsen_US
dc.rights©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.titleA study on metal-insulator-silicon hydrogen sensor with La2O3 as gate insulatoren_US
dc.typeConference_Paperen_US
dc.identifier.emailChen, G: hkgchen@hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.emailYu, J: jcwyu@hku.hk-
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/ICSICT.2010.5667552-
dc.identifier.scopuseid_2-s2.0-78751512674-
dc.identifier.hkuros204660en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-78751512674&selection=ref&src=s&origin=recordpage-
dc.identifier.spage1465en_US
dc.identifier.epage1467en_US
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridChen, G=35777710500-
dc.identifier.scopusauthoridLai, PT=7202946460-
dc.identifier.scopusauthoridYu, J=35209338200-
dc.customcontrol.immutablesml 160105 - merged-

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