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Article: Polarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe nanobelts

TitlePolarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe nanobelts
Authors
Li, LJin, LWang, JSmith, DJYin, WJYan, YSang, HChoy, WCHMcCartney, MR
Keywordselectron holography
nanocrystals
semiconductors
structure-property relationships
ZnSe
Issue Date2012
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/publish/en/journals/alphabeticIndex/2089
Citation
Advanced Materials, 2012, v. 24 n. 10, p. 1328-1332 How to Cite?
DOI: http://dx.doi.org/10.1002/adma.201103920
AbstractHomogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw-tooth-like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization-induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures.
Persistent Identifierhttp://hdl.handle.net/10722/164017
ISSN
0935-9648
2022 Impact Factor: 29.4
2020 SCImago Journal Rankings: 10.707
ISI Accession Number ID
WOS:000301112200019

 

DC FieldValueLanguage
dc.contributor.authorLi, Len_US
dc.contributor.authorJin, Len_US
dc.contributor.authorWang, Jen_US
dc.contributor.authorSmith, DJen_US
dc.contributor.authorYin, WJen_US
dc.contributor.authorYan, Yen_US
dc.contributor.authorSang, Hen_US
dc.contributor.authorChoy, WCHen_US
dc.contributor.authorMcCartney, MRen_US
dc.date.accessioned2012-09-20T07:54:51Z-
dc.date.available2012-09-20T07:54:51Z-
dc.date.issued2012en_US
dc.identifier.citationAdvanced Materials, 2012, v. 24 n. 10, p. 1328-1332en_US
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/164017-
dc.description.abstractHomogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw-tooth-like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization-induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures. <Abstract from Wiley>-
dc.languageengen_US
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/publish/en/journals/alphabeticIndex/2089-
dc.relation.ispartofAdvanced Materialsen_US
dc.subjectelectron holography-
dc.subjectnanocrystals-
dc.subjectsemiconductors-
dc.subjectstructure-property relationships-
dc.subjectZnSe-
dc.subject.meshNanostructures - chemistry-
dc.subject.meshSelenium Compounds - chemistry-
dc.subject.meshSulfides - chemistry-
dc.subject.meshZinc - chemistry-
dc.subject.meshZinc Compounds - chemistry-
dc.titlePolarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe nanobeltsen_US
dc.typeArticleen_US
dc.identifier.emailLi, L: luying.li@asu.eduen_US
dc.identifier.emailWang, J: wang@whu.edu.cn-
dc.identifier.emailChoy, WCH: chchoy@eee.hku.hk-
dc.identifier.authorityChoy, WCH=rp00218en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.201103920-
dc.identifier.pmid22298439-
dc.identifier.scopuseid_2-s2.0-84863240512-
dc.identifier.hkuros208018en_US
dc.identifier.volume24en_US
dc.identifier.issue10-
dc.identifier.spage1328en_US
dc.identifier.epage1332en_US
dc.identifier.isiWOS:000301112200019-
dc.publisher.placeGermany-
dc.identifier.issnl0935-9648-

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