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Article: Transient sensitivity of sectorial split-drain magnetic field-effect transistor

TitleTransient sensitivity of sectorial split-drain magnetic field-effect transistor
Authors
Yang, ZSiu, STam, WKok, CLeung, CWLai, PTWong, HPong, PWT
KeywordsHysteresis
magnetic field-effect transistor (MAGFET)
sectorial
sensitivity
split-drain
transient sensitivity
Issue Date2013
PublisherInstitute of Electrical and Electronics Engineers. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20
Citation
IEEE Transactions on Magnetics, 2013, v. 49 n. 7, p. 4048-4051 How to Cite?
DOI: http://dx.doi.org/10.1109/TMAG.2013.2241034
Persistent Identifierhttp://hdl.handle.net/10722/185883
ISSN
0018-9464
2023 Impact Factor: 2.1
2023 SCImago Journal Rankings: 0.729
ISI Accession Number ID
WOS:000322483200247

 

DC FieldValueLanguage
dc.contributor.authorYang, Zen_US
dc.contributor.authorSiu, Sen_US
dc.contributor.authorTam, Wen_US
dc.contributor.authorKok, Cen_US
dc.contributor.authorLeung, CWen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorWong, Hen_US
dc.contributor.authorPong, PWT-
dc.date.accessioned2013-08-20T11:44:14Z-
dc.date.available2013-08-20T11:44:14Z-
dc.date.issued2013en_US
dc.identifier.citationIEEE Transactions on Magnetics, 2013, v. 49 n. 7, p. 4048-4051en_US
dc.identifier.issn0018-9464-
dc.identifier.urihttp://hdl.handle.net/10722/185883-
dc.languageengen_US
dc.publisherInstitute of Electrical and Electronics Engineers. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20-
dc.relation.ispartofIEEE Transactions on Magneticsen_US
dc.subjectHysteresis-
dc.subjectmagnetic field-effect transistor (MAGFET)-
dc.subjectsectorial-
dc.subjectsensitivity-
dc.subjectsplit-drain-
dc.subjecttransient sensitivity-
dc.titleTransient sensitivity of sectorial split-drain magnetic field-effect transistoren_US
dc.typeArticleen_US
dc.identifier.emailPong, PWT: ppong@eee.hku.hken_US
dc.identifier.authorityPong, PWT=rp00217en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TMAG.2013.2241034-
dc.identifier.scopuseid_2-s2.0-84880822810-
dc.identifier.hkuros219728en_US
dc.identifier.volume49en_US
dc.identifier.issue7-
dc.identifier.spage4048en_US
dc.identifier.epage4051en_US
dc.identifier.isiWOS:000322483200247-
dc.publisher.placeUnited States-
dc.identifier.issnl0018-9464-

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