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Conference Paper: Fundamental components of the IC packaging electromagnetic interference (EMI) analysis

TitleFundamental components of the IC packaging electromagnetic interference (EMI) analysis
Authors
KeywordsEMI
Ground lid
IC packaging
Trace radiation
Via radiation
Issue Date2012
PublisherIEEE.
Citation
The IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS 2012), Tempe, AZ., 21-24 October 2012. In IEEE Topical Meeting on Electrical Performance of Electronic Packaging Proceedings, 2012, p. 141-144, article no. 6457861 How to Cite?
AbstractThe IC packaging EMC/SI/PI problems have been broadly attested. But IC packaging EMI was seldom addressed. Because the EMI emission by IC packagings is increasingly significant, in this paper, EMI behaviors are systematically studied. To fundamentally understand the radiation mechanism, radiated contributions from ground lids, vias, and traces of the packaging are investigated and modeled separately. It is seen that the packaging EMI has clearly low frequency and high frequency behaviors. The low frequency behavior is due to the Hertzian dipole effects of vias. The high frequency behavior is due to the radiation of excited cavity modes. Both theoretical analysis based on first principles and simulated results based on the numerical full wave solver are provided to find out critical impact factors to IC packaging EMI. This work provides basic modeling components for comprehensive radiation studies in the future. It directly benefits fundamental understandings and guidelines for the optimal design of the packaging EMI reduction. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/186721
ISBN

 

DC FieldValueLanguage
dc.contributor.authorHuang, NKHen_US
dc.contributor.authorJiang, Len_US
dc.contributor.authorYu, HCen_US
dc.contributor.authorLi, G.en_US
dc.contributor.authorXu, S.en_US
dc.contributor.authorRen, HSen_US
dc.date.accessioned2013-08-20T12:19:14Z-
dc.date.available2013-08-20T12:19:14Z-
dc.date.issued2012en_US
dc.identifier.citationThe IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS 2012), Tempe, AZ., 21-24 October 2012. In IEEE Topical Meeting on Electrical Performance of Electronic Packaging Proceedings, 2012, p. 141-144, article no. 6457861en_US
dc.identifier.isbn978-1-4673-2538-7-
dc.identifier.urihttp://hdl.handle.net/10722/186721-
dc.description.abstractThe IC packaging EMC/SI/PI problems have been broadly attested. But IC packaging EMI was seldom addressed. Because the EMI emission by IC packagings is increasingly significant, in this paper, EMI behaviors are systematically studied. To fundamentally understand the radiation mechanism, radiated contributions from ground lids, vias, and traces of the packaging are investigated and modeled separately. It is seen that the packaging EMI has clearly low frequency and high frequency behaviors. The low frequency behavior is due to the Hertzian dipole effects of vias. The high frequency behavior is due to the radiation of excited cavity modes. Both theoretical analysis based on first principles and simulated results based on the numerical full wave solver are provided to find out critical impact factors to IC packaging EMI. This work provides basic modeling components for comprehensive radiation studies in the future. It directly benefits fundamental understandings and guidelines for the optimal design of the packaging EMI reduction. © 2012 IEEE.-
dc.languageengen_US
dc.publisherIEEE.en_US
dc.relation.ispartofIEEE Topical Meeting on Electrical Performance of Electronic Packaging Proceedingsen_US
dc.subjectEMI-
dc.subjectGround lid-
dc.subjectIC packaging-
dc.subjectTrace radiation-
dc.subjectVia radiation-
dc.titleFundamental components of the IC packaging electromagnetic interference (EMI) analysisen_US
dc.typeConference_Paperen_US
dc.identifier.emailHuang, NKH: khhuang@eee.hku.hken_US
dc.identifier.emailJiang, L: jianglj@hku.hk-
dc.identifier.emailYu, HC: yuhc@huawei.com-
dc.identifier.authorityJiang, L=rp01338en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/EPEPS.2012.6457861-
dc.identifier.scopuseid_2-s2.0-84874492238-
dc.identifier.hkuros218860en_US
dc.identifier.spage141en_US
dc.identifier.epage144en_US
dc.publisher.placeUnited States-
dc.customcontrol.immutablesml 130822-

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