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Article: HfTiON as Charge-Trapping Layer for Nonvolatile Memory Applications

TitleHfTiON as Charge-Trapping Layer for Nonvolatile Memory Applications
Authors
HUANG, XLai, PT
Issue Date2012
Citation
ECS Transactions, 2012, v. 45 n. 3, p. 355-360 How to Cite?
DOI: http://dx.doi.org/10.1149/1.3700900
Persistent Identifierhttp://hdl.handle.net/10722/191377
ISI Accession Number ID
WOS:000325405800035

 

DC FieldValueLanguage
dc.contributor.authorHUANG, Xen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T06:55:32Z-
dc.date.available2013-10-15T06:55:32Z-
dc.date.issued2012en_US
dc.identifier.citationECS Transactions, 2012, v. 45 n. 3, p. 355-360en_US
dc.identifier.urihttp://hdl.handle.net/10722/191377-
dc.languageengen_US
dc.relation.ispartofECS Transactionsen_US
dc.titleHfTiON as Charge-Trapping Layer for Nonvolatile Memory Applicationsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1149/1.3700900-
dc.identifier.scopuseid_2-s2.0-84869015063-
dc.identifier.hkuros225749en_US
dc.identifier.volume45en_US
dc.identifier.spage355en_US
dc.identifier.epage360en_US
dc.identifier.isiWOS:000325405800035-

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