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Article: Improved Performance of GeON as Charge Storage Layer in Flash Memory by Optimal Annealing

TitleImproved Performance of GeON as Charge Storage Layer in Flash Memory by Optimal Annealing
Authors
TAO, QLai, PT
Issue Date2012
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2012, v. 52 n. 11, p. 2597-2601 How to Cite?
DOI: http://dx.doi.org/10.1016/j.microrel.2012.06.112
Persistent Identifierhttp://hdl.handle.net/10722/191382
ISSN
0026-2714
2022 Impact Factor: 1.6
2020 SCImago Journal Rankings: 0.445
ISI Accession Number ID
WOS:000310767400016

 

DC FieldValueLanguage
dc.contributor.authorTAO, Qen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T06:55:34Z-
dc.date.available2013-10-15T06:55:34Z-
dc.date.issued2012en_US
dc.identifier.citationMicroelectronics Reliability, 2012, v. 52 n. 11, p. 2597-2601en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://hdl.handle.net/10722/191382-
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_US
dc.relation.ispartofMicroelectronics Reliabilityen_US
dc.titleImproved Performance of GeON as Charge Storage Layer in Flash Memory by Optimal Annealingen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.microrel.2012.06.112-
dc.identifier.scopuseid_2-s2.0-84867582017-
dc.identifier.hkuros225956en_US
dc.identifier.volume52en_US
dc.identifier.spage2597en_US
dc.identifier.epage2601en_US
dc.identifier.isiWOS:000310767400016-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.issnl0026-2714-

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