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Article: Charge-Trapping Characteristics of Ga2O3 Nanocrystals for Nonvolatile Memory Applications

TitleCharge-Trapping Characteristics of Ga2O3 Nanocrystals for Nonvolatile Memory Applications
Authors
HUANG, XLai, PTSin, JKO
Issue Date2012
Citation
ECS Solid State Letters, 2012, v. 1 n. 5, p. Q45-Q47 How to Cite?
DOI: http://dx.doi.org/10.1149/2.005206ssl
Persistent Identifierhttp://hdl.handle.net/10722/191385
ISI Accession Number ID
WOS:000318341000012

 

DC FieldValueLanguage
dc.contributor.authorHUANG, Xen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorSin, JKOen_US
dc.date.accessioned2013-10-15T06:55:35Z-
dc.date.available2013-10-15T06:55:35Z-
dc.date.issued2012en_US
dc.identifier.citationECS Solid State Letters, 2012, v. 1 n. 5, p. Q45-Q47en_US
dc.identifier.urihttp://hdl.handle.net/10722/191385-
dc.languageengen_US
dc.relation.ispartofECS Solid State Lettersen_US
dc.titleCharge-Trapping Characteristics of Ga2O3 Nanocrystals for Nonvolatile Memory Applicationsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1149/2.005206ssl-
dc.identifier.scopuseid_2-s2.0-84880554979-
dc.identifier.hkuros225976en_US
dc.identifier.volume1en_US
dc.identifier.spageQ45en_US
dc.identifier.epageQ47en_US
dc.identifier.isiWOS:000318341000012-

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