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Article: Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide–nitride-oxide-silicon memory

TitleUltrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide–nitride-oxide-silicon memory
Authors
Liu, LXu, JChen, JXJi, FHUANG, XLai, PT
KeywordsBlocking layer
Charge storage layer
High-k gate stack
MONOS memory
Tunneling layer
Issue Date2012
Citation
Thin Solid Films, 2012, v. 524, p. 263-267 How to Cite?
DOI: http://dx.doi.org/10.1016/j.tsf.2012.10.051
Persistent Identifierhttp://hdl.handle.net/10722/191388
ISI Accession Number ID
WOS:000311410300042

 

DC FieldValueLanguage
dc.contributor.authorLiu, Len_US
dc.contributor.authorXu, Jen_US
dc.contributor.authorChen, JXen_US
dc.contributor.authorJi, Fen_US
dc.contributor.authorHUANG, Xen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T06:55:36Z-
dc.date.available2013-10-15T06:55:36Z-
dc.date.issued2012en_US
dc.identifier.citationThin Solid Films, 2012, v. 524, p. 263-267en_US
dc.identifier.urihttp://hdl.handle.net/10722/191388-
dc.languageengen_US
dc.relation.ispartofThin Solid Filmsen_US
dc.subjectBlocking layer-
dc.subjectCharge storage layer-
dc.subjectHigh-k gate stack-
dc.subjectMONOS memory-
dc.subjectTunneling layer-
dc.titleUltrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide–nitride-oxide-silicon memoryen_US
dc.typeArticleen_US
dc.identifier.emailLiu, L: lusally@hku.hken_US
dc.identifier.emailXu, J: jpxu@eee.hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityXu, J=rp00197en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.doi10.1016/j.tsf.2012.10.051-
dc.identifier.scopuseid_2-s2.0-84869496043-
dc.identifier.hkuros225998en_US
dc.identifier.volume524en_US
dc.identifier.spage263en_US
dc.identifier.epage267en_US
dc.identifier.isiWOS:000311410300042-

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