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Conference Paper: A study on a metal-insulator-silicon hydrogen sensor with LaTiON as gate insulator

TitleA study on a metal-insulator-silicon hydrogen sensor with LaTiON as gate insulator
Authors
Chen, GYu, JLai, PT
KeywordsSchottky-diode
Hydrogen sensor
Silicon
Gate insulator
LaTiON
Issue Date2012
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/wps/find/journaldescription.cws_home/714716/description#description
Citation
The 2012 International Conference on Solid State Devices and Materials Science (SSDMS 2012), Macao, China, 1-2 April 2012. In Physics Procedia, 2012, v. 25, p. 50-55 How to Cite?
DOI: http://dx.doi.org/10.1016/j.phpro.2012.03.048
AbstractAmongst the many types of semiconductor hydrogen sensors currently studied, Schottky-diodes are preferable as they are simple to fabricate and exhibit high sensitivities and fast response times. To enhance the sensor's performance, a gate insulator is deposited in order to minimize interfacial diffusion between the electrode and the substrate. In this work, we present a novel MIS Schottky-diode hydrogen sensor with LaTiON as gate insulator. The hydrogen-sensing properties (sensitivity, barrier height variation) were examined from room temperature (RT) to 150 °C and its sensitivity was found to reach 2.5 at 100 °C. Moreover, the hydrogen reaction kinetics were studied and these results showed that the sensor was very sensitive to hydrogen ambient.
Persistent Identifierhttp://hdl.handle.net/10722/191620
ISSN
1875-3892
2020 SCImago Journal Rankings: 0.260
ISI Accession Number ID
WOS:000305960300008

 

DC FieldValueLanguage
dc.contributor.authorChen, Gen_US
dc.contributor.authorYu, Jen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T07:14:42Z-
dc.date.available2013-10-15T07:14:42Z-
dc.date.issued2012en_US
dc.identifier.citationThe 2012 International Conference on Solid State Devices and Materials Science (SSDMS 2012), Macao, China, 1-2 April 2012. In Physics Procedia, 2012, v. 25, p. 50-55en_US
dc.identifier.issn1875-3892-
dc.identifier.urihttp://hdl.handle.net/10722/191620-
dc.description.abstractAmongst the many types of semiconductor hydrogen sensors currently studied, Schottky-diodes are preferable as they are simple to fabricate and exhibit high sensitivities and fast response times. To enhance the sensor's performance, a gate insulator is deposited in order to minimize interfacial diffusion between the electrode and the substrate. In this work, we present a novel MIS Schottky-diode hydrogen sensor with LaTiON as gate insulator. The hydrogen-sensing properties (sensitivity, barrier height variation) were examined from room temperature (RT) to 150 °C and its sensitivity was found to reach 2.5 at 100 °C. Moreover, the hydrogen reaction kinetics were studied and these results showed that the sensor was very sensitive to hydrogen ambient.-
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/wps/find/journaldescription.cws_home/714716/description#description-
dc.relation.ispartofPhysics Procediaen_US
dc.subjectSchottky-diode-
dc.subjectHydrogen sensor-
dc.subjectSilicon-
dc.subjectGate insulator-
dc.subjectLaTiON-
dc.titleA study on a metal-insulator-silicon hydrogen sensor with LaTiON as gate insulatoren_US
dc.typeConference_Paperen_US
dc.identifier.emailYu, J: jcwyu@hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1016/j.phpro.2012.03.048-
dc.identifier.hkuros225768en_US
dc.identifier.volume25-
dc.identifier.spage50-
dc.identifier.epage55-
dc.identifier.isiWOS:000305960300008-
dc.publisher.placeNetherlandsen_US
dc.customcontrol.immutablesml 131106-
dc.identifier.issnl1875-3892-

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