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Conference Paper: Comparison between TaON/SiO2 and HfON/SiO2 as dual tunnel layer in charge-trapping flash memory applications

TitleComparison between TaON/SiO2 and HfON/SiO2 as dual tunnel layer in charge-trapping flash memory applications
Authors
Chen, JXu, JLiu, LXu, HXLai, PT
Issue Date2012
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
The 8th IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2012), Bangkok, Thailand, 3-5 December 2012. How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/191654

 

DC FieldValueLanguage
dc.contributor.authorChen, J-
dc.contributor.authorXu, J-
dc.contributor.authorLiu, L-
dc.contributor.authorXu, HX-
dc.contributor.authorLai, PT-
dc.date.accessioned2013-10-15T07:14:54Z-
dc.date.available2013-10-15T07:14:54Z-
dc.date.issued2012-
dc.identifier.citationThe 8th IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2012), Bangkok, Thailand, 3-5 December 2012.-
dc.identifier.urihttp://hdl.handle.net/10722/191654-
dc.languageeng-
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofI E E E Conference on Electron Devices and Solid-State Circuits Proceedings-
dc.rightsI E E E Conference on Electron Devices and Solid-State Circuits Proceedings. Copyright © I E E E.-
dc.rights©2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.titleComparison between TaON/SiO2 and HfON/SiO2 as dual tunnel layer in charge-trapping flash memory applications-
dc.typeConference_Paper-
dc.identifier.emailChen, J: cjxhk@hku.hk-
dc.identifier.emailXu, J: jpxu@eee.hku.hk-
dc.identifier.emailLiu, L: lusally@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityXu, J=rp00197-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.hkuros226043-
dc.publisher.placeUnited States-

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