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Article: Effect of oxygen stoichiometry on microstructural and magnetic properties of FePt/TaOx bilayer fabricated by ion-beam-bombardment deposition

TitleEffect of oxygen stoichiometry on microstructural and magnetic properties of FePt/TaOx bilayer fabricated by ion-beam-bombardment deposition
Authors
Li, GLeung, CChen, YHsu, JSun, ALin, KPong, PW
KeywordsFePt
ion-beam bombardment
magnetic properties
Issue Date2013
PublisherInstitute of Electrical and Electronics Engineers. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20
Citation
IEEE Transactions on Magnetics, 2013, v. 49 n. 7, p. 3310-3313 How to Cite?
DOI: http://dx.doi.org/10.1109/TMAG.2013.2247383
Persistent Identifierhttp://hdl.handle.net/10722/194686
ISSN
0018-9464
2023 Impact Factor: 2.1
2023 SCImago Journal Rankings: 0.729
ISI Accession Number ID
WOS:000322483200060

 

DC FieldValueLanguage
dc.contributor.authorLi, Gen_US
dc.contributor.authorLeung, Cen_US
dc.contributor.authorChen, Yen_US
dc.contributor.authorHsu, Jen_US
dc.contributor.authorSun, Aen_US
dc.contributor.authorLin, Ken_US
dc.contributor.authorPong, PWen_US
dc.date.accessioned2014-02-17T02:03:15Z-
dc.date.available2014-02-17T02:03:15Z-
dc.date.issued2013en_US
dc.identifier.citationIEEE Transactions on Magnetics, 2013, v. 49 n. 7, p. 3310-3313en_US
dc.identifier.issn0018-9464en_US
dc.identifier.urihttp://hdl.handle.net/10722/194686-
dc.languageengen_US
dc.publisherInstitute of Electrical and Electronics Engineers. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20-
dc.relation.ispartofIEEE Transactions on Magneticsen_US
dc.subjectFePt-
dc.subjection-beam bombardment-
dc.subjectmagnetic properties-
dc.titleEffect of oxygen stoichiometry on microstructural and magnetic properties of FePt/TaOx bilayer fabricated by ion-beam-bombardment depositionen_US
dc.typeArticleen_US
dc.identifier.emailLi, G: mitch@eee.hku.hken_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TMAG.2013.2247383-
dc.identifier.scopuseid_2-s2.0-84880784228-
dc.identifier.hkuros227855en_US
dc.identifier.hkuros219729-
dc.identifier.volume49en_US
dc.identifier.issue7en_US
dc.identifier.spage3310en_US
dc.identifier.epage3313en_US
dc.identifier.isiWOS:000322483200060-
dc.publisher.placeUnited States-
dc.identifier.issnl0018-9464-

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