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Article: Model order reduction for quantum transport simulation of band-to-band tunneling devices

TitleModel order reduction for quantum transport simulation of band-to-band tunneling devices
Authors
HUANG, JZhang, L.N.Chew, WCYam, CYJiang, LChen, GChan, M.S.
KeywordsBand-to-band tunneling (BTBT)
eight-band k p model
indium arsenide (InAs) nanowires
model order reduction (MOR)
nonequilibrium Greens function (NEGF)
source-pocket TFETs
tunneling field-effect transistors (TFETs)
Issue Date2014
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 2014, v. 61, p. 8 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2013.2295983
Persistent Identifierhttp://hdl.handle.net/10722/202551
ISSN
0018-9383
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID
WOS:000330620600046

 

DC FieldValueLanguage
dc.contributor.authorHUANG, Jen_US
dc.contributor.authorZhang, L.N.en_US
dc.contributor.authorChew, WCen_US
dc.contributor.authorYam, CYen_US
dc.contributor.authorJiang, Len_US
dc.contributor.authorChen, Gen_US
dc.contributor.authorChan, M.S.en_US
dc.date.accessioned2014-09-19T08:40:57Z-
dc.date.available2014-09-19T08:40:57Z-
dc.date.issued2014en_US
dc.identifier.citationIEEE Transactions on Electron Devices, 2014, v. 61, p. 8en_US
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/202551-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.rightsIEEE Transactions on Electron Devices. Copyright © IEEE.en_US
dc.rights©20xx IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_US
dc.subjectBand-to-band tunneling (BTBT)-
dc.subjecteight-band k p model-
dc.subjectindium arsenide (InAs) nanowires-
dc.subjectmodel order reduction (MOR)-
dc.subjectnonequilibrium Greens function (NEGF)-
dc.subjectsource-pocket TFETs-
dc.subjecttunneling field-effect transistors (TFETs)-
dc.titleModel order reduction for quantum transport simulation of band-to-band tunneling devicesen_US
dc.typeArticleen_US
dc.identifier.emailChew, WC: wcchew@hku.hken_US
dc.identifier.emailYam, CY: yamcy1@hku.hken_US
dc.identifier.emailJiang, L: jianglj@hku.hken_US
dc.identifier.emailChen, G: ghc@yangtze.hku.hken_US
dc.identifier.authorityChew, WC=rp00656en_US
dc.identifier.authorityYam, CY=rp01399en_US
dc.identifier.authorityJiang, L=rp01338en_US
dc.identifier.authorityChen, G=rp00671en_US
dc.identifier.doi10.1109/TED.2013.2295983en_US
dc.identifier.scopuseid_2-s2.0-84893583994-
dc.identifier.hkuros236277en_US
dc.identifier.volume61en_US
dc.identifier.spage8en_US
dc.identifier.epage8en_US
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000330620600046-
dc.publisher.placeUSAen_US
dc.identifier.issnl0018-9383-

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