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Article: Improved interfacial and electrical properties of GaAs metal-oxdiesemiconductor capacitors with HfTiON as gate dialectric and TaON as Passivation interlayer

TitleImproved interfacial and electrical properties of GaAs metal-oxdiesemiconductor capacitors with HfTiON as gate dialectric and TaON as Passivation interlayer
Authors
Zhu, S.Y.Huang, Y.Lai, PTWang, LXu, J
Issue Date2013
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2013, v. 103 n. 9, article no. 092901, p. 1-4 How to Cite?
DOI: http://dx.doi.org/10.1063/1.4818000
Persistent Identifierhttp://hdl.handle.net/10722/202921
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000323846900038

 

DC FieldValueLanguage
dc.contributor.authorZhu, S.Y.en_US
dc.contributor.authorHuang, Y.en_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorWang, Len_US
dc.contributor.authorXu, Jen_US
dc.date.accessioned2014-09-19T10:10:14Z-
dc.date.available2014-09-19T10:10:14Z-
dc.date.issued2013en_US
dc.identifier.citationApplied Physics Letters, 2013, v. 103 n. 9, article no. 092901, p. 1-4-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/202921-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsCopyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2013, v. 103 n. 9, article no. 092901, p. 1-4 and may be found at https://doi.org/10.1063/1.4818000-
dc.titleImproved interfacial and electrical properties of GaAs metal-oxdiesemiconductor capacitors with HfTiON as gate dialectric and TaON as Passivation interlayeren_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.emailWang, L: wangls@hku.hken_US
dc.identifier.emailXu, J: jpxu@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.authorityXu, J=rp00197en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4818000-
dc.identifier.scopuseid_2-s2.0-84884174243-
dc.identifier.hkuros240508en_US
dc.identifier.volume103en_US
dc.identifier.issue9-
dc.identifier.spagearticle no. 092901, p. 1-
dc.identifier.epagearticle no. 092901, p. 4-
dc.identifier.isiWOS:000323846900038-
dc.identifier.issnl0003-6951-

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