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Article: Electrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with A1ON as interlayer
Title | Electrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with A1ON as interlayer |
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Authors | |
Issue Date | 2014 |
Citation | IEEE Trans. Electron Devices, 2014, vol. ED-61, p. pp.742-746 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/202929 |
DC Field | Value | Language |
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dc.contributor.author | Wang, L | en_US |
dc.contributor.author | Liu, L | en_US |
dc.contributor.author | Xu, J | en_US |
dc.contributor.author | Zhu, S.Y. | en_US |
dc.contributor.author | Huang, Y. | en_US |
dc.contributor.author | Lai, PT | en_US |
dc.date.accessioned | 2014-09-19T10:10:39Z | - |
dc.date.available | 2014-09-19T10:10:39Z | - |
dc.date.issued | 2014 | en_US |
dc.identifier.citation | IEEE Trans. Electron Devices, 2014, vol. ED-61, p. pp.742-746 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/202929 | - |
dc.language | eng | en_US |
dc.relation.ispartof | IEEE Trans. Electron Devices | en_US |
dc.title | Electrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with A1ON as interlayer | en_US |
dc.type | Article | en_US |
dc.identifier.email | Wang, L: wangls@hku.hk | en_US |
dc.identifier.email | Liu, L: liulu@hku.hk | en_US |
dc.identifier.email | Xu, J: jpxu@eee.hku.hk | en_US |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_US |
dc.identifier.authority | Xu, J=rp00197 | en_US |
dc.identifier.authority | Lai, PT=rp00130 | en_US |
dc.identifier.hkuros | 240551 | en_US |
dc.identifier.volume | vol. ED-61 | en_US |
dc.identifier.spage | pp.742 | en_US |
dc.identifier.epage | 746 | en_US |