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Article: Electrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with A1ON as interlayer

TitleElectrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with A1ON as interlayer
Authors
Wang, LLiu, LXu, JZhu, S.Y.Huang, Y.Lai, PT
Issue Date2014
Citation
IEEE Trans. Electron Devices, 2014, vol. ED-61, p. pp.742-746 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/202929

 

DC FieldValueLanguage
dc.contributor.authorWang, Len_US
dc.contributor.authorLiu, Len_US
dc.contributor.authorXu, Jen_US
dc.contributor.authorZhu, S.Y.en_US
dc.contributor.authorHuang, Y.en_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2014-09-19T10:10:39Z-
dc.date.available2014-09-19T10:10:39Z-
dc.date.issued2014en_US
dc.identifier.citationIEEE Trans. Electron Devices, 2014, vol. ED-61, p. pp.742-746en_US
dc.identifier.urihttp://hdl.handle.net/10722/202929-
dc.languageengen_US
dc.relation.ispartofIEEE Trans. Electron Devicesen_US
dc.titleElectrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with A1ON as interlayeren_US
dc.typeArticleen_US
dc.identifier.emailWang, L: wangls@hku.hken_US
dc.identifier.emailLiu, L: liulu@hku.hken_US
dc.identifier.emailXu, J: jpxu@eee.hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityXu, J=rp00197en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.hkuros240551en_US
dc.identifier.volumevol. ED-61en_US
dc.identifier.spagepp.742en_US
dc.identifier.epage746en_US

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