Process induced magnetic sensitivity variation in sectorial split-drain magentic field-effect transistor

Abstract

This paper dissects the effect of the statistical variation of sector angle to magnetic sensitivity in sectorial split-drain magnetic field effect transistors (SD-MAGFETs). The magnetic sensitivity of sectorial SD-MAGFET depends on both the sector angle and the charge trapping effect along the channel boundary. Our empirical studies showed that both factors are affected by the statistical variation of the sector angle, and each becomes the dominating effect at different sector angle range. As a result, we proposed a statistical model for the process induced magnetic sensitivity, which is useful for the prediction of the appropriate sector angle that achieves the smallest magnetic sensitivity variation brought by the process induced variation. The developed model is empirical, which also demonstrate the existence of an optimal sector angle with respect to process variation. Copyright © IEEE.