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Conference Paper: Embedding nano-pillar arrays in InGaN light-emitting diodes
Title | Embedding nano-pillar arrays in InGaN light-emitting diodes |
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Authors | |
Keywords | InGaN Light-emitting diodes Nanostructures |
Issue Date | 2014 |
Publisher | Wiley - V C H Verlag GmbH & Co. KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/journal/122311674/grouphome/home.html |
Citation | The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC., 25-30 August 2013. In Physica Status Solidi. C, 2014, v. 11 n. 3-4, p. 742-745 How to Cite? |
Abstract | The embedded nano-pillar light-emitting diodes are fabricated via nanosphere lithography in combination with epitaxial lateral overgrowth method, followed by standard micro-fabrication process. Apart from output power enhancement due to diffraction and scattering effect from the embedded nano-pillars, the device is demonstrated to have insignificant spectral blue shift with increasing injection currents, which is dependent on the built-in piezoelectric field that is partially suppressed by strain relaxation of nanostructured quantum wells. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
Description | These journal issues entitled: Special Issue: 10th International Conference on Nitride Semiconductors (ICNS-10) |
Persistent Identifier | http://hdl.handle.net/10722/204044 |
ISSN | 2020 SCImago Journal Rankings: 0.210 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, KH | en_US |
dc.contributor.author | Zang, KY | en_US |
dc.contributor.author | Chua, SJ | en_US |
dc.contributor.author | Choi, HW | en_US |
dc.date.accessioned | 2014-09-19T20:02:02Z | - |
dc.date.available | 2014-09-19T20:02:02Z | - |
dc.date.issued | 2014 | en_US |
dc.identifier.citation | The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC., 25-30 August 2013. In Physica Status Solidi. C, 2014, v. 11 n. 3-4, p. 742-745 | en_US |
dc.identifier.issn | 1610-1642 | - |
dc.identifier.uri | http://hdl.handle.net/10722/204044 | - |
dc.description | These journal issues entitled: Special Issue: 10th International Conference on Nitride Semiconductors (ICNS-10) | - |
dc.description.abstract | The embedded nano-pillar light-emitting diodes are fabricated via nanosphere lithography in combination with epitaxial lateral overgrowth method, followed by standard micro-fabrication process. Apart from output power enhancement due to diffraction and scattering effect from the embedded nano-pillars, the device is demonstrated to have insignificant spectral blue shift with increasing injection currents, which is dependent on the built-in piezoelectric field that is partially suppressed by strain relaxation of nanostructured quantum wells. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | - |
dc.language | eng | en_US |
dc.publisher | Wiley - V C H Verlag GmbH & Co. KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/journal/122311674/grouphome/home.html | - |
dc.relation.ispartof | Physica Status Solidi. C: Current Topics in Solid State Physics | en_US |
dc.subject | InGaN | - |
dc.subject | Light-emitting diodes | - |
dc.subject | Nanostructures | - |
dc.title | Embedding nano-pillar arrays in InGaN light-emitting diodes | en_US |
dc.type | Conference_Paper | en_US |
dc.identifier.email | Li, KH: khei@eee.hku.hk | en_US |
dc.identifier.email | Choi, HW: hwchoi@hku.hk | en_US |
dc.identifier.authority | Choi, HW=rp00108 | en_US |
dc.description.nature | link_to_OA_fulltext | - |
dc.identifier.doi | 10.1002/pssc.201300536 | - |
dc.identifier.scopus | eid_2-s2.0-84898549167 | - |
dc.identifier.hkuros | 236768 | en_US |
dc.identifier.hkuros | 236793 | - |
dc.identifier.volume | 11 | - |
dc.identifier.issue | 3-4 | - |
dc.identifier.spage | 742 | - |
dc.identifier.epage | 745 | - |
dc.identifier.isi | WOS:000346071300092 | - |
dc.publisher.place | Germany | - |
dc.customcontrol.immutable | sml 141024 | - |
dc.identifier.issnl | 1610-1634 | - |