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Conference Paper: Improvement of channel-current-induced gate-oxide breakdown in n-MOSFET's using rapid thermal nitridation

TitleImprovement of channel-current-induced gate-oxide breakdown in n-MOSFET's using rapid thermal nitridation
Authors
Huang, MQLai, PTMa, ZJCheng, YCLiu, BY
Issue Date1992
Citation
The 3rd International Conference on Solid State and Integrated Circuit Technology, Beijing, China, In Conference Proceedings, 1992, p. 594-597 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/204135

 

DC FieldValueLanguage
dc.contributor.authorHuang, MQen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorMa, ZJen_US
dc.contributor.authorCheng, YCen_US
dc.contributor.authorLiu, BYen_US
dc.date.accessioned2014-09-19T20:06:36Z-
dc.date.available2014-09-19T20:06:36Z-
dc.date.issued1992en_US
dc.identifier.citationThe 3rd International Conference on Solid State and Integrated Circuit Technology, Beijing, China, In Conference Proceedings, 1992, p. 594-597en_US
dc.identifier.urihttp://hdl.handle.net/10722/204135-
dc.languageengen_US
dc.relation.ispartofProceedings of the 3rd International Conference on Solid State and Integrated Circuit Technologyen_US
dc.titleImprovement of channel-current-induced gate-oxide breakdown in n-MOSFET's using rapid thermal nitridationen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.emailCheng, YC: yccheng@hkucc.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.hkuros240598en_US
dc.identifier.spage594en_US
dc.identifier.epage597en_US

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