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Conference Paper: Electrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniques
Title | Electrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniques |
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Authors | |
Issue Date | 1994 |
Publisher | IEEE. The journal's website is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000245 |
Citation | The 40th Anniversary International Electron Devices Meeting (IEDM '94), San Francisco, CA., 11-14 December 1994. How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/204137 |
ISSN | 2023 SCImago Journal Rankings: 1.047 |
DC Field | Value | Language |
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dc.contributor.author | Zeng, X. | en_US |
dc.contributor.author | Lai, PT | en_US |
dc.contributor.author | Ng, WT | en_US |
dc.date.accessioned | 2014-09-19T20:06:36Z | - |
dc.date.available | 2014-09-19T20:06:36Z | - |
dc.date.issued | 1994 | en_US |
dc.identifier.citation | The 40th Anniversary International Electron Devices Meeting (IEDM '94), San Francisco, CA., 11-14 December 1994. | en_US |
dc.identifier.issn | 0163-1918 | - |
dc.identifier.uri | http://hdl.handle.net/10722/204137 | - |
dc.language | eng | en_US |
dc.publisher | IEEE. The journal's website is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000245 | - |
dc.relation.ispartof | International Electron Devices Meeting IEDM Technical Digest | - |
dc.title | Electrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniques | en_US |
dc.type | Conference_Paper | en_US |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_US |
dc.identifier.authority | Lai, PT=rp00130 | en_US |
dc.identifier.hkuros | 240603 | en_US |
dc.publisher.place | United States | - |
dc.identifier.issnl | 0163-1918 | - |