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- Publisher Website: 10.1109/TENCON.1995.496387
- Scopus: eid_2-s2.0-0029542585
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Conference Paper: Charge trapping properties of N2O-treated NH3-nitrided oxides under high-field stress
| Title | Charge trapping properties of N2O-treated NH3-nitrided oxides under high-field stress |
|---|---|
| Authors | |
| Issue Date | 1995 |
| Publisher | I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=3573 |
| Citation | IEEE Region 10th International Conference on Microelectronics and VLSI (TENCON '95), Hong Kong, China, 6-10 November 1995. In IEEE Region International Conference on Microelectronics and VLSI Proceedings, 1995, p. 256-259 How to Cite? |
| Abstract | A new technique, namely N2O treatment of NH3-nitrided oxides (NON20), is proposed to fabricate thin oxide. It is shown that the N2O treatment is superior to conventional reoxidation step in improving charge trapping property and interface hardness of oxides under high-field stress |
| Description | Conference Theme: Asia-Pacific Microelectronics 2000 |
| Persistent Identifier | http://hdl.handle.net/10722/204145 |
| ISBN |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Zeng, X | en_US |
| dc.contributor.author | Lai, PT | en_US |
| dc.contributor.author | Ng, WT | en_US |
| dc.date.accessioned | 2014-09-19T20:06:50Z | - |
| dc.date.available | 2014-09-19T20:06:50Z | - |
| dc.date.issued | 1995 | en_US |
| dc.identifier.citation | IEEE Region 10th International Conference on Microelectronics and VLSI (TENCON '95), Hong Kong, China, 6-10 November 1995. In IEEE Region International Conference on Microelectronics and VLSI Proceedings, 1995, p. 256-259 | en_US |
| dc.identifier.isbn | 9780780326248 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/204145 | - |
| dc.description | Conference Theme: Asia-Pacific Microelectronics 2000 | - |
| dc.description.abstract | A new technique, namely N2O treatment of NH3-nitrided oxides (NON20), is proposed to fabricate thin oxide. It is shown that the N2O treatment is superior to conventional reoxidation step in improving charge trapping property and interface hardness of oxides under high-field stress | - |
| dc.language | eng | en_US |
| dc.publisher | I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=3573 | - |
| dc.relation.ispartof | IEEE Region International Conference on Microelectronics and VLSI Proceedings | en_US |
| dc.rights | ©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
| dc.title | Charge trapping properties of N2O-treated NH3-nitrided oxides under high-field stress | en_US |
| dc.type | Conference_Paper | en_US |
| dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_US |
| dc.identifier.authority | Lai, PT=rp00130 | en_US |
| dc.description.nature | published_or_final_version | - |
| dc.identifier.doi | 10.1109/TENCON.1995.496387 | - |
| dc.identifier.scopus | eid_2-s2.0-0029542585 | - |
| dc.identifier.hkuros | 240614 | en_US |
| dc.identifier.hkuros | 12532 | - |
| dc.identifier.spage | 256 | en_US |
| dc.identifier.epage | 259 | en_US |
| dc.publisher.place | United States | - |