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Conference Paper: A Fast Switching Insulated-Gate P-I-N Diode Controlled Thyristor Structure

TitleA Fast Switching Insulated-Gate P-I-N Diode Controlled Thyristor Structure
Authors
Jun, CSin, JKOPoon, MCNg, WTLai, PT
Issue Date1996
PublisherI E E E.
Citation
I E E E International Conference on Semiconductor Electronics Proceedings (ICSE '96), Penang, Malaysia, 26-28 November 1996, p. 122-125 How to Cite?
DOI: http://dx.doi.org/10.1109/SMELEC.1996.616467
AbstractA new Insulated-Gate PIN Diode Controlled Thyristor (IGPDT) structure is reported. Its on-state and turn-off characteristics are studied using two-dimensional numerical simulations. Results show that the IGPDT achieves similar on-state characteristics compared to that of the trench BRT (Base Resistance Controlled Thyristor), and also provides gate turn-off capability up to current density of several hundred A/cm 2. However, resistive switching turn-off speed of the IGFDT is approximately 3 times faster than that of the trench BRT
Persistent Identifierhttp://hdl.handle.net/10722/204157
ISBN
0780333888

 

DC FieldValueLanguage
dc.contributor.authorJun, Cen_US
dc.contributor.authorSin, JKOen_US
dc.contributor.authorPoon, MCen_US
dc.contributor.authorNg, WTen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2014-09-19T20:07:23Z-
dc.date.available2014-09-19T20:07:23Z-
dc.date.issued1996en_US
dc.identifier.citationI E E E International Conference on Semiconductor Electronics Proceedings (ICSE '96), Penang, Malaysia, 26-28 November 1996, p. 122-125en_US
dc.identifier.isbn0780333888-
dc.identifier.urihttp://hdl.handle.net/10722/204157-
dc.description.abstractA new Insulated-Gate PIN Diode Controlled Thyristor (IGPDT) structure is reported. Its on-state and turn-off characteristics are studied using two-dimensional numerical simulations. Results show that the IGPDT achieves similar on-state characteristics compared to that of the trench BRT (Base Resistance Controlled Thyristor), and also provides gate turn-off capability up to current density of several hundred A/cm 2. However, resistive switching turn-off speed of the IGFDT is approximately 3 times faster than that of the trench BRT-
dc.languageengen_US
dc.publisherI E E E.-
dc.relation.ispartofI E E E International Conference on Semiconductor Electronics Proceedingsen_US
dc.rights©1996 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.titleA Fast Switching Insulated-Gate P-I-N Diode Controlled Thyristor Structureen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/SMELEC.1996.616467-
dc.identifier.hkuros240634en_US
dc.identifier.spage122en_US
dc.identifier.epage125en_US
dc.publisher.placeUnited States-

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