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Conference Paper: Ultrathin oxynitride formation by low energy ion-implantation

TitleUltrathin oxynitride formation by low energy ion-implantation
Authors
Khoueir, ALu, ZHNg, WTLai, PT
Issue Date1999
Citation
The 6th International Conference on VLSI and CAD (ICVC '99), Seoul, Korea, 26-27 October 1999, p. 229-232 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/204169

 

DC FieldValueLanguage
dc.contributor.authorKhoueir, A-
dc.contributor.authorLu, ZH-
dc.contributor.authorNg, WT-
dc.contributor.authorLai, PT-
dc.date.accessioned2014-09-19T20:07:44Z-
dc.date.available2014-09-19T20:07:44Z-
dc.date.issued1999-
dc.identifier.citationThe 6th International Conference on VLSI and CAD (ICVC '99), Seoul, Korea, 26-27 October 1999, p. 229-232-
dc.identifier.urihttp://hdl.handle.net/10722/204169-
dc.languageeng-
dc.relation.ispartofProceedings of International Conference on VLSI and CAD (ICVC)-
dc.titleUltrathin oxynitride formation by low energy ion-implantation-
dc.typeConference_Paper-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.hkuros240652-
dc.identifier.spage229-
dc.identifier.epage232-

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