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Conference Paper: Ultrathin oxynitride formation by low energy ion-implantation
Title | Ultrathin oxynitride formation by low energy ion-implantation |
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Authors | |
Issue Date | 1999 |
Citation | The 6th International Conference on VLSI and CAD (ICVC '99), Seoul, Korea, 26-27 October 1999, p. 229-232 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/204169 |
DC Field | Value | Language |
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dc.contributor.author | Khoueir, A | - |
dc.contributor.author | Lu, ZH | - |
dc.contributor.author | Ng, WT | - |
dc.contributor.author | Lai, PT | - |
dc.date.accessioned | 2014-09-19T20:07:44Z | - |
dc.date.available | 2014-09-19T20:07:44Z | - |
dc.date.issued | 1999 | - |
dc.identifier.citation | The 6th International Conference on VLSI and CAD (ICVC '99), Seoul, Korea, 26-27 October 1999, p. 229-232 | - |
dc.identifier.uri | http://hdl.handle.net/10722/204169 | - |
dc.language | eng | - |
dc.relation.ispartof | Proceedings of International Conference on VLSI and CAD (ICVC) | - |
dc.title | Ultrathin oxynitride formation by low energy ion-implantation | - |
dc.type | Conference_Paper | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.identifier.hkuros | 240652 | - |
dc.identifier.spage | 229 | - |
dc.identifier.epage | 232 | - |