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Conference Paper: Electron trapping and detrapping behaviors of thin thermally nitrided oxides

TitleElectron trapping and detrapping behaviors of thin thermally nitrided oxides
Authors
Lai, PTWong, HCheng, YCLo, HBLiu, ZH
Issue Date1989
Citation
The 1989 International Conference on VLSI and CAD (ICVC '89), Seoul, Korea, October 1989. In Techical Digest, 1989, p. 40 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/206020

 

DC FieldValueLanguage
dc.contributor.authorLai, PT-
dc.contributor.authorWong, H-
dc.contributor.authorCheng, YC-
dc.contributor.authorLo, HB-
dc.contributor.authorLiu, ZH-
dc.date.accessioned2014-10-20T11:17:06Z-
dc.date.available2014-10-20T11:17:06Z-
dc.date.issued1989-
dc.identifier.citationThe 1989 International Conference on VLSI and CAD (ICVC '89), Seoul, Korea, October 1989. In Techical Digest, 1989, p. 40-
dc.identifier.urihttp://hdl.handle.net/10722/206020-
dc.languageeng-
dc.relation.ispartofTechical Digest of 1989 International Conference on VLSI and CAD (ICVC '89)-
dc.titleElectron trapping and detrapping behaviors of thin thermally nitrided oxides-
dc.typeConference_Paper-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.emailCheng, YC: yccheng@hkucc.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.hkuros241283-
dc.identifier.spage40-
dc.identifier.epage40-

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