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Conference Paper: Computer simulation of rapid thermal annealing of thermally grown oxide in ammonia ambient

TitleComputer simulation of rapid thermal annealing of thermally grown oxide in ammonia ambient
Authors
Lai, PTCheng, YCWong, H.
Issue Date1989
Citation
The 1989 International Conference on VLSI and CAD (ICVC '89), Seoul, Korea, October 1989. In Techical Digest, 1989, p. 512 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/206021

 

DC FieldValueLanguage
dc.contributor.authorLai, PT-
dc.contributor.authorCheng, YC-
dc.contributor.authorWong, H.-
dc.date.accessioned2014-10-20T11:17:06Z-
dc.date.available2014-10-20T11:17:06Z-
dc.date.issued1989-
dc.identifier.citationThe 1989 International Conference on VLSI and CAD (ICVC '89), Seoul, Korea, October 1989. In Techical Digest, 1989, p. 512-
dc.identifier.urihttp://hdl.handle.net/10722/206021-
dc.languageeng-
dc.relation.ispartofTechical Digest of 1989 International Conference on VLSI and CAD (ICVC '89)-
dc.titleComputer simulation of rapid thermal annealing of thermally grown oxide in ammonia ambient-
dc.typeConference_Paper-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.emailCheng, YC: yccheng@hkucc.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.hkuros241284-
dc.identifier.spage512-
dc.identifier.epage512-

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