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Article: Reduction of Thermal Resistance and Optical Power Loss Using Thin-Film Light-Emitting Diode (LED) Structure

TitleReduction of Thermal Resistance and Optical Power Loss Using Thin-Film Light-Emitting Diode (LED) Structure
Authors
Chen, HCheung, YFChoi, HWTan, SCHui, SYR
KeywordsLight-emitting diodes
Photo-electro-thermal theory
Thin-Film
Issue Date2015
PublisherIEEE. The Journal's web site is located at http://www.ewh.ieee.org/soc/ies/ties/index.html
Citation
IEEE Transactions on Industrial Electronics, 2015, v. 62 n. 11, p. 6925-6933 How to Cite?
DOI: http://dx.doi.org/10.1109/TIE.2015.2443106
AbstractIn this paper, a GaN-LED with sapphire structure and a thin-film LED without sapphire structure are characterized in the photo-electro-thermal (PET) modeling framework for comparison. Starting from the analysis and modeling of internal quantum efficiency as a function of current and temperature of blue LED, this work develops the thin-film LED device model and derives its optical power and the heat dissipation coefficient. The device parameters of the two LED devices with different structural designs are then compared. Practical optical power measurements are compared with theoretical predictions based on the two types of fabricated devices. It is shown that the thin-film LED device has much lower thermal resistance and optical power loss.
Persistent Identifierhttp://hdl.handle.net/10722/210730
ISSN
0278-0046
2023 Impact Factor: 7.5
2023 SCImago Journal Rankings: 3.395
ISI Accession Number ID
WOS:000362760300027
Grants
Sustainable Lighting Technology: From Devices to Systems

 

DC FieldValueLanguage
dc.contributor.authorChen, H-
dc.contributor.authorCheung, YF-
dc.contributor.authorChoi, HW-
dc.contributor.authorTan, SC-
dc.contributor.authorHui, SYR-
dc.date.accessioned2015-06-23T05:48:44Z-
dc.date.available2015-06-23T05:48:44Z-
dc.date.issued2015-
dc.identifier.citationIEEE Transactions on Industrial Electronics, 2015, v. 62 n. 11, p. 6925-6933-
dc.identifier.issn0278-0046-
dc.identifier.urihttp://hdl.handle.net/10722/210730-
dc.description.abstractIn this paper, a GaN-LED with sapphire structure and a thin-film LED without sapphire structure are characterized in the photo-electro-thermal (PET) modeling framework for comparison. Starting from the analysis and modeling of internal quantum efficiency as a function of current and temperature of blue LED, this work develops the thin-film LED device model and derives its optical power and the heat dissipation coefficient. The device parameters of the two LED devices with different structural designs are then compared. Practical optical power measurements are compared with theoretical predictions based on the two types of fabricated devices. It is shown that the thin-film LED device has much lower thermal resistance and optical power loss.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://www.ewh.ieee.org/soc/ies/ties/index.html-
dc.relation.ispartofIEEE Transactions on Industrial Electronics-
dc.subjectLight-emitting diodes-
dc.subjectPhoto-electro-thermal theory-
dc.subjectThin-Film-
dc.titleReduction of Thermal Resistance and Optical Power Loss Using Thin-Film Light-Emitting Diode (LED) Structure-
dc.typeArticle-
dc.identifier.emailChen, H: htchen@eee.hku.hk-
dc.identifier.emailCheung, YF: yukfaira@hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.emailTan, SC: sctan@eee.hku.hk-
dc.identifier.emailHui, SYR: ronhui@eee.hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.authorityHui, SYR=rp01510-
dc.identifier.authorityTan, SC=rp01606-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TIE.2015.2443106-
dc.identifier.scopuseid_2-s2.0-84944312344-
dc.identifier.hkuros244148-
dc.identifier.volume62-
dc.identifier.issue11-
dc.identifier.spage6925-
dc.identifier.epage6933-
dc.identifier.eissn1557-9948-
dc.identifier.isiWOS:000362760300027-
dc.relation.projectSustainable Lighting Technology: From Devices to Systems-
dc.identifier.issnl0278-0046-

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