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- Publisher Website: 10.1016/j.orgel.2014.07.016
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Article: High-mobility pentacene thin-film transistor by using LaxTa(1-x)Oy as gate dielectric
Title | High-mobility pentacene thin-film transistor by using LaxTa(1-x)Oy as gate dielectric |
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Authors | |
Keywords | High-κ dielectric La incorporation Organic thin-film transistor Oxygen vacancy TaLaO |
Issue Date | 2014 |
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/orgel |
Citation | Organic Electronics, 2014, v. 15 n. 10, p. 2499-2504 How to Cite? |
Abstract | Pentacene organic thin-film transistors (OTFTs) using LaxTa(1−x)Oy as gate dielectric with different La contents (x = 0.227, 0.562, 0.764, 0.883) have been fabricated and compared with those using Ta oxide or La oxide. The OTFT with La0.764Ta0.236Oy can achieve a carrier mobility of 1.21 cm2 V−1s−1s, which is about 40 times and two times higher than those of the devices using Ta oxide and La oxide, respectively. As supported by XPS, AFM and noise measurement, the reasons lie in that La incorporation can suppress the formation of oxygen vacancies in Ta oxide, and Ta content can alleviate the hygroscopicity of La oxide, resulting in more passivated and smoother dielectric surface and thus larger pentacene grains, which lead to higher carrier mobility. |
Persistent Identifier | http://hdl.handle.net/10722/215128 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.648 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Han, CY | - |
dc.contributor.author | Tang, WM | - |
dc.contributor.author | Leung, CH | - |
dc.contributor.author | Che, CM | - |
dc.contributor.author | Lai, PT | - |
dc.date.accessioned | 2015-08-21T13:15:04Z | - |
dc.date.available | 2015-08-21T13:15:04Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | Organic Electronics, 2014, v. 15 n. 10, p. 2499-2504 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.uri | http://hdl.handle.net/10722/215128 | - |
dc.description.abstract | Pentacene organic thin-film transistors (OTFTs) using LaxTa(1−x)Oy as gate dielectric with different La contents (x = 0.227, 0.562, 0.764, 0.883) have been fabricated and compared with those using Ta oxide or La oxide. The OTFT with La0.764Ta0.236Oy can achieve a carrier mobility of 1.21 cm2 V−1s−1s, which is about 40 times and two times higher than those of the devices using Ta oxide and La oxide, respectively. As supported by XPS, AFM and noise measurement, the reasons lie in that La incorporation can suppress the formation of oxygen vacancies in Ta oxide, and Ta content can alleviate the hygroscopicity of La oxide, resulting in more passivated and smoother dielectric surface and thus larger pentacene grains, which lead to higher carrier mobility. | - |
dc.language | eng | - |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/orgel | - |
dc.relation.ispartof | Organic Electronics | - |
dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
dc.subject | High-κ dielectric | - |
dc.subject | La incorporation | - |
dc.subject | Organic thin-film transistor | - |
dc.subject | Oxygen vacancy | - |
dc.subject | TaLaO | - |
dc.title | High-mobility pentacene thin-film transistor by using LaxTa(1-x)Oy as gate dielectric | - |
dc.type | Article | - |
dc.identifier.email | Leung, CH: hreelch@HKUCC.hku.hk | - |
dc.identifier.email | Che, CM: cmche@hku.hk | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Leung, CH=rp00146 | - |
dc.identifier.authority | Che, CM=rp00670 | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | postprint | - |
dc.identifier.doi | 10.1016/j.orgel.2014.07.016 | - |
dc.identifier.scopus | eid_2-s2.0-84925011274 | - |
dc.identifier.hkuros | 246779 | - |
dc.identifier.volume | 15 | - |
dc.identifier.issue | 10 | - |
dc.identifier.spage | 2499 | - |
dc.identifier.epage | 2504 | - |
dc.identifier.isi | WOS:000341290000045 | - |
dc.publisher.place | Netherlands | - |
dc.identifier.issnl | 1566-1199 | - |