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Article: Post-treatment-Free Solution-Processed Non-stoichiometric NiOx Nanoparticles for Efficient Hole-Transport Layers of Organic Optoelectronic Devices

TitlePost-treatment-Free Solution-Processed Non-stoichiometric NiOx Nanoparticles for Efficient Hole-Transport Layers of Organic Optoelectronic Devices
Authors
Keywordshole-transport layers
nickel oxide
organic optoelectronic devices
post-treatment-free
transition metal oxides
Issue Date2015
Citation
Advanced Materials, 2015, v. 27, p. 2930-2937 How to Cite?
AbstractHigh-quality non-stoichiometric NiOx nanoparticles are synthesized by a facile chemical precipitation method. The NiOx film can function as an effective hole-transport layer (HTL) without any post-treatments, while offering wide temperature applicability from room temperature to 150 °C. A high efficiency of 9.16% is achieved in organic solar cells using the NiOx HTL. A better performance in a NiOx-based organic light-emitting diode is observed, compared with a device using PEDOT:PSS.
Persistent Identifierhttp://hdl.handle.net/10722/216953
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorJiang, F-
dc.contributor.authorChoy, WCH-
dc.contributor.authorLi, X-
dc.contributor.authorZhang, D-
dc.contributor.authorCheng, J-
dc.date.accessioned2015-09-18T05:44:00Z-
dc.date.available2015-09-18T05:44:00Z-
dc.date.issued2015-
dc.identifier.citationAdvanced Materials, 2015, v. 27, p. 2930-2937-
dc.identifier.urihttp://hdl.handle.net/10722/216953-
dc.description.abstractHigh-quality non-stoichiometric NiOx nanoparticles are synthesized by a facile chemical precipitation method. The NiOx film can function as an effective hole-transport layer (HTL) without any post-treatments, while offering wide temperature applicability from room temperature to 150 °C. A high efficiency of 9.16% is achieved in organic solar cells using the NiOx HTL. A better performance in a NiOx-based organic light-emitting diode is observed, compared with a device using PEDOT:PSS.-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.subjecthole-transport layers-
dc.subjectnickel oxide-
dc.subjectorganic optoelectronic devices-
dc.subjectpost-treatment-free-
dc.subjecttransition metal oxides-
dc.titlePost-treatment-Free Solution-Processed Non-stoichiometric NiOx Nanoparticles for Efficient Hole-Transport Layers of Organic Optoelectronic Devices -
dc.typeArticle-
dc.identifier.emailChoy, WCH: chchoy@eee.hku.hk-
dc.identifier.emailZhang, D: zhangdi@eee.hku.hk-
dc.identifier.emailCheng, J: jqcheng@HKUCC-COM.hku.hk-
dc.identifier.authorityChoy, WCH=rp00218-
dc.identifier.doi10.1002/adma.201405391-
dc.identifier.scopuseid_2-s2.0-84928919870-
dc.identifier.hkuros250873-
dc.identifier.volume27-
dc.identifier.spage2930-
dc.identifier.epage2937-
dc.identifier.isiWOS:000354487100015-

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