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Article: Vacuum-Assisted Thermal Annealing of CH3NH3PbI3 for Highly Stable and Efficient Perovskite Solar Cells

TitleVacuum-Assisted Thermal Annealing of CH3NH3PbI3 for Highly Stable and Efficient Perovskite Solar Cells
Authors
KeywordsCH3NH3Cl
crystallization process
morphology
perovskite solar cell
vacuum-assisted thermal annealing
Issue Date2015
PublisherACS Publications. The Journal's web site is located at http://pubs.acs.org/journals/ancac3/index.html
Citation
ACS Nano, 2015, v. 9, p. 639-646 How to Cite?
AbstractSolar cells incorporating lead halide-based perovskite absorbers can exhibit impressive power conversion efficiencies (PCEs), recently surpassing 15%. Despite rapid developments, achieving precise control over the morphologies of the perovskite films (minimizing pore formation) and enhanced stability and reproducibility of the devices remain challenging, both of which are necessary for further advancements. Here we demonstrate vacuum-assisted thermal annealing as an effective means for controlling the composition and morphology of the CH3NH3PbI3 films formed from the precursors of PbCl2 and CH3NH3I. We identify the critical role played by the byproduct of CH3NH3Cl on the formation and the photovoltaic performance of the perovskite film. By completely removing the byproduct through our vacuum-assisted thermal annealing approach, we are able to produce pure, pore-free planar CH3NH3PbI3 films with high PCE reaching 14.5% in solar cell device. Importantly, the removal of CH3NH3Cl significantly improves the device stability and reproducibility with a standard deviation of only 0.92% in PCE as well as strongly reducing the photocurrent hysteresis.
Persistent Identifierhttp://hdl.handle.net/10722/216955
ISSN
2021 Impact Factor: 18.027
2020 SCImago Journal Rankings: 5.554
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorXie, F-
dc.contributor.authorZhang, D-
dc.contributor.authorSU, H-
dc.contributor.authorRen, X-
dc.contributor.authorWONG, KS-
dc.contributor.authorGRATZEL, M-
dc.contributor.authorChoy, WCH-
dc.date.accessioned2015-09-18T05:44:05Z-
dc.date.available2015-09-18T05:44:05Z-
dc.date.issued2015-
dc.identifier.citationACS Nano, 2015, v. 9, p. 639-646-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/216955-
dc.description.abstractSolar cells incorporating lead halide-based perovskite absorbers can exhibit impressive power conversion efficiencies (PCEs), recently surpassing 15%. Despite rapid developments, achieving precise control over the morphologies of the perovskite films (minimizing pore formation) and enhanced stability and reproducibility of the devices remain challenging, both of which are necessary for further advancements. Here we demonstrate vacuum-assisted thermal annealing as an effective means for controlling the composition and morphology of the CH3NH3PbI3 films formed from the precursors of PbCl2 and CH3NH3I. We identify the critical role played by the byproduct of CH3NH3Cl on the formation and the photovoltaic performance of the perovskite film. By completely removing the byproduct through our vacuum-assisted thermal annealing approach, we are able to produce pure, pore-free planar CH3NH3PbI3 films with high PCE reaching 14.5% in solar cell device. Importantly, the removal of CH3NH3Cl significantly improves the device stability and reproducibility with a standard deviation of only 0.92% in PCE as well as strongly reducing the photocurrent hysteresis.-
dc.languageeng-
dc.publisherACS Publications. The Journal's web site is located at http://pubs.acs.org/journals/ancac3/index.html-
dc.relation.ispartofACS Nano-
dc.subjectCH3NH3Cl-
dc.subjectcrystallization process-
dc.subjectmorphology-
dc.subjectperovskite solar cell-
dc.subjectvacuum-assisted thermal annealing-
dc.titleVacuum-Assisted Thermal Annealing of CH3NH3PbI3 for Highly Stable and Efficient Perovskite Solar Cells -
dc.typeArticle-
dc.identifier.emailXie, F: fxxie@HKUCC-COM.hku.hk-
dc.identifier.emailZhang, D: zhangdi@eee.hku.hk-
dc.identifier.emailRen, X: xgren@HKUCC-COM.hku.hk-
dc.identifier.emailChoy, WCH: chchoy@eee.hku.hk-
dc.identifier.authorityChoy, WCH=rp00218-
dc.identifier.doi10.1021/nn505978r-
dc.identifier.pmid25549113-
dc.identifier.scopuseid_2-s2.0-84921761305-
dc.identifier.hkuros250888-
dc.identifier.volume9-
dc.identifier.spage639-
dc.identifier.epage646-
dc.identifier.eissn1936-086X-
dc.identifier.isiWOS:000348619000069-
dc.publisher.placeWashington-
dc.identifier.issnl1936-0851-

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