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Article: Performance Improvements of Metal–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with ZrO2 Charge-Trapping Layer by Using Nitrogen Incorporation

TitlePerformance Improvements of Metal–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with ZrO2 Charge-Trapping Layer by Using Nitrogen Incorporation
Authors
Chen, JXXu, JLiu, LLai, PT
Issue Date2013
PublisherThe Japan Society of Applied Physics. The Journal's web site is located at http://apex.ipap.jp/
Citation
Applied Physics Express, 2013, v. 6, p. 084202 How to Cite?
DOI: http://dx.doi.org/10.7567/APEX.6.084202
Persistent Identifierhttp://hdl.handle.net/10722/217029
ISSN
1882-0778
2021 Impact Factor: 2.819
2020 SCImago Journal Rankings: 0.911
ISI Accession Number ID
WOS:000322761300017

 

DC FieldValueLanguage
dc.contributor.authorChen, JX-
dc.contributor.authorXu, J-
dc.contributor.authorLiu, L-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-09-18T05:46:29Z-
dc.date.available2015-09-18T05:46:29Z-
dc.date.issued2013-
dc.identifier.citationApplied Physics Express, 2013, v. 6, p. 084202-
dc.identifier.issn1882-0778-
dc.identifier.urihttp://hdl.handle.net/10722/217029-
dc.languageeng-
dc.publisherThe Japan Society of Applied Physics. The Journal's web site is located at http://apex.ipap.jp/-
dc.relation.ispartofApplied Physics Express-
dc.titlePerformance Improvements of Metal–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with ZrO2 Charge-Trapping Layer by Using Nitrogen Incorporation -
dc.typeArticle-
dc.identifier.emailLiu, L: liulu@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityXu, J=rp00197-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.7567/APEX.6.084202-
dc.identifier.scopuseid_2-s2.0-84883007541-
dc.identifier.hkuros254203-
dc.identifier.volume6-
dc.identifier.spage084202-
dc.identifier.epage084202-
dc.identifier.eissn1882-0786-
dc.identifier.isiWOS:000322761300017-
dc.identifier.issnl1882-0778-

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