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Conference Paper: Improved Charge-Trapping Performance of Hf-Doped SrTiO3 for Nonvolatile Memory Applications
Title | Improved Charge-Trapping Performance of Hf-Doped SrTiO3 for Nonvolatile Memory Applications |
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Authors | |
Issue Date | 2015 |
Publisher | Electrochemical Society, Inc. The Journal's web site is located at http://www.ecsdl.org/ECST/ |
Citation | 227th ECS Meeting, Chicago, IL., USA, 24-28 May 2015. In ECS Transactions, 2015, v. 66 n. 5, p. 117-120 How to Cite? |
Abstract | The charge-trapping characteristics of Hf doped SrTiO3 have been studied based on Al/Al2O3/Hf-doped SrTiO3/SiO2/Si capacitors. The thermodynamic stability of the SrTiO3 film is significantly improved by Hf incorporation, thus resulting in negligible formation of an interlayer at the Hf-doped SrTiO3/SiO2 interface, as confirmed by X-ray photoelectron spectroscopy and transmission electron microscopy. The memory device with Hf-doped SrTiO3 as charge-trapping layer displays high speed at low operating voltage (a VFB shift of 1.9 V at +6 V, 100 ms) and good data retention (charge loss of 12.7% after 104 s). Therefore, the Hf-doped SrTiO3 film is a promising material as charge-trapping layer for high-performance nonvolatile memory applications. |
Persistent Identifier | http://hdl.handle.net/10722/217385 |
ISSN | 2020 SCImago Journal Rankings: 0.235 |
DC Field | Value | Language |
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dc.contributor.author | Huang, XD | - |
dc.contributor.author | Lai, PT | - |
dc.date.accessioned | 2015-09-18T05:58:05Z | - |
dc.date.available | 2015-09-18T05:58:05Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | 227th ECS Meeting, Chicago, IL., USA, 24-28 May 2015. In ECS Transactions, 2015, v. 66 n. 5, p. 117-120 | - |
dc.identifier.issn | 1938-6737 | - |
dc.identifier.uri | http://hdl.handle.net/10722/217385 | - |
dc.description.abstract | The charge-trapping characteristics of Hf doped SrTiO3 have been studied based on Al/Al2O3/Hf-doped SrTiO3/SiO2/Si capacitors. The thermodynamic stability of the SrTiO3 film is significantly improved by Hf incorporation, thus resulting in negligible formation of an interlayer at the Hf-doped SrTiO3/SiO2 interface, as confirmed by X-ray photoelectron spectroscopy and transmission electron microscopy. The memory device with Hf-doped SrTiO3 as charge-trapping layer displays high speed at low operating voltage (a VFB shift of 1.9 V at +6 V, 100 ms) and good data retention (charge loss of 12.7% after 104 s). Therefore, the Hf-doped SrTiO3 film is a promising material as charge-trapping layer for high-performance nonvolatile memory applications. | - |
dc.language | eng | - |
dc.publisher | Electrochemical Society, Inc. The Journal's web site is located at http://www.ecsdl.org/ECST/ | - |
dc.relation.ispartof | ECS Transactions | - |
dc.rights | ECS Transactions. Copyright © Electrochemical Society, Inc. | - |
dc.title | Improved Charge-Trapping Performance of Hf-Doped SrTiO3 for Nonvolatile Memory Applications | - |
dc.type | Conference_Paper | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | postprint | - |
dc.identifier.doi | 10.1149/06605.0117ecst | - |
dc.identifier.scopus | eid_2-s2.0-84931409199 | - |
dc.identifier.hkuros | 254235 | - |
dc.identifier.volume | 66 | - |
dc.identifier.issue | 5 | - |
dc.identifier.spage | 117 | - |
dc.identifier.epage | 120 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 1938-5862 | - |