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Article: A Study on the Electrical Characteristics of InGaZnO Thin-Film Transistor with HfLaO Gate Dielectric Annealed in Different Gases

TitleA Study on the Electrical Characteristics of InGaZnO Thin-Film Transistor with HfLaO Gate Dielectric Annealed in Different Gases
Authors
Qian, LXLai, PT
KeywordsAmorphous InGaZnO (a-IGZO)
Annealing gas
HfLaO
High-k
Thin-film transistor (TFT)
Issue Date2014
PublisherElsevier. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2014, v. 54 n. 11, p. 2396-2400 How to Cite?
DOI: http://dx.doi.org/10.1016/j.microrel.2014.04.011
Persistent Identifierhttp://hdl.handle.net/10722/219121
ISSN
0026-2714
2023 Impact Factor: 1.6
2023 SCImago Journal Rankings: 0.394
ISI Accession Number ID
WOS:000346212900010

 

DC FieldValueLanguage
dc.contributor.authorQian, LX-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-09-18T07:13:43Z-
dc.date.available2015-09-18T07:13:43Z-
dc.date.issued2014-
dc.identifier.citationMicroelectronics Reliability, 2014, v. 54 n. 11, p. 2396-2400-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/10722/219121-
dc.languageeng-
dc.publisherElsevier. The Journal's web site is located at http://www.elsevier.com/locate/microrel-
dc.relation.ispartofMicroelectronics Reliability-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectAmorphous InGaZnO (a-IGZO)-
dc.subjectAnnealing gas-
dc.subjectHfLaO-
dc.subjectHigh-k-
dc.subjectThin-film transistor (TFT)-
dc.titleA Study on the Electrical Characteristics of InGaZnO Thin-Film Transistor with HfLaO Gate Dielectric Annealed in Different Gases-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepostprint-
dc.identifier.doi10.1016/j.microrel.2014.04.011-
dc.identifier.scopuseid_2-s2.0-84911400391-
dc.identifier.hkuros253918-
dc.identifier.volume54-
dc.identifier.issue11-
dc.identifier.spage2396-
dc.identifier.epage2400-
dc.identifier.isiWOS:000346212900010-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl0026-2714-

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