File Download
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1002/pssr.201600227
- Scopus: eid_2-s2.0-84983611860
- WOS: WOS:000386599100010
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor
Title | Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor |
---|---|
Authors | |
Keywords | GaAs gate high-k dielectrics metal−oxide−semiconductor capacitors TaON yttrium |
Issue Date | 2016 |
Publisher | Wiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270 |
Citation | Physica Status Solidi - Rapid Research Letters, 2016, v. 10 n. 9, p. 703-707 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/231908 |
ISSN | 2023 Impact Factor: 2.5 2023 SCImago Journal Rankings: 0.655 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, LN | - |
dc.contributor.author | Choi, HW | - |
dc.contributor.author | Xu, JP | - |
dc.contributor.author | Lai, PT | - |
dc.date.accessioned | 2016-09-20T05:26:18Z | - |
dc.date.available | 2016-09-20T05:26:18Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Physica Status Solidi - Rapid Research Letters, 2016, v. 10 n. 9, p. 703-707 | - |
dc.identifier.issn | 1862-6254 | - |
dc.identifier.uri | http://hdl.handle.net/10722/231908 | - |
dc.language | eng | - |
dc.publisher | Wiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270 | - |
dc.relation.ispartof | Physica Status Solidi - Rapid Research Letters | - |
dc.rights | This is the accepted version of the following article: Physica Status Solidi - Rapid Research Letters, 2016, v. 10 n. 9, p. 703-707, which has been published in final form at http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201600227/abstract | - |
dc.subject | GaAs | - |
dc.subject | gate | - |
dc.subject | high-k dielectrics | - |
dc.subject | metal−oxide−semiconductor capacitors | - |
dc.subject | TaON | - |
dc.subject | yttrium | - |
dc.title | Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor | - |
dc.type | Article | - |
dc.identifier.email | Choi, HW: hwchoi@hku.hk | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Choi, HW=rp00108 | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | postprint | - |
dc.identifier.doi | 10.1002/pssr.201600227 | - |
dc.identifier.scopus | eid_2-s2.0-84983611860 | - |
dc.identifier.hkuros | 263479 | - |
dc.identifier.volume | 10 | - |
dc.identifier.issue | 9 | - |
dc.identifier.spage | 703 | - |
dc.identifier.epage | 707 | - |
dc.identifier.isi | WOS:000386599100010 | - |
dc.publisher.place | Germany | - |
dc.identifier.issnl | 1862-6254 | - |